Used AMAT / APPLIED MATERIALS Centura AP Ultima X #9172654 for sale
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ID: 9172654
HDP CVD System, 12"
Factory interface (FI) version: 5.3
Number of load-ports: 3EA
FI Robot type: KAWASKI with edge grip & Pre-aligner (single axis)
Mainframe type: 300mm CenturaAP mainframe
Vacuum robot type: VHP with 2 ceramic blades
LLKA: SWLL
LLKB: SWLL
Chamber configuration:
A: Ultima X HDP-CVD
B: Ultima X HDP-CVD
C: Blank
D: Ultima X HDP-CVD
Process chambers:
Ch#A/B/D : Ultima X HDP-CVD
Process: USG STI & IMD, PSVN
Gas ring & Nozzle type: 36 Ports & 1.76” ALN Nozzles
Cathode type: 300mm Dual HE ESC
RPS Type: MKS Astron RPS
Turbo pump type:
STP-XH3203P (CH A/B)
TMP-H3603LMC-A1(CH D)
Gate valve type: NorCal
RF Generator:
Top/Side: MKS ENI Spectrum (2 MHz, 11 kW)
BIAS: MKS ENI Spectrum (13.56 MHz, 11 kW)
RF Match box:
Top/Side: Local match
Bias: AE AZX72 Auto tune match Box
IHC Type: 20/20 Torr dual IHC
WTM Type: Wafer temperature monitor 4 channels
Gas pallet configuration:
(12) Stick gas pallets (CH A/B)
N2 Purge
O2: 400sccm
NF3: 400sccm
He: 600sccm
SIH4: 400sccm
H2: 1000sccm
AR:1000sccm
SiH4: 50sccm
He: 600sccm
NF3: 400sccm
NF3: 3000sccm
Ar: 3000sccm
N2 Purge
Stick gas pallets (CH D)
N2 Purge
O2
NF3
H2 1000sccm
SiH4
He 600sccm
Ar 50sccm
H2 1,000sccm
SiH4
He 600sccm
NF3
NF3
Ar 3000sccm
N2 Purge
Gas panel feed: Bottom
Exhaust: Bottom
MFCs: Unit 8565C multiflow
Valve type: Veriflo
Filter type: Millipore
Controller type: DeviceNet
Transfer pump: ALCATEL A100L iPUP (1EA)
Primary AC rack: 2EA
Facilities UPS interface
Power requirements:
200/208 VAC, 3-Phase, 400 A, 4-Wire, Frequency 50/60 Hz
2005 vintage.
AMAT / APPLIED MATERIALS Centura AP Ultima X Reactor is a semiconductor device used for the deposition of dielectric and metal films. This high performance equipment offers the latest in high throughput and precision, enabling engineers to quickly and accurately produce complex structures in a wide range of materials. AMAT Centura AP Ultima X comes equipped with powerful PECVD (plasma enhanced chemical vapor deposition) technology, allowing it to rapidly deposit dielectric and metal films at high temperatures. Large substrate sizes, up to 300 mm in diameter, can be handled with great precision and accuracy. The deposition rates are also significantly increased by the combination of low pressure, medium frequency, high power and low load. The system comes with a sophisticated control and monitoring unit, allowing users to closely monitor the deposition of films. The machine can detect the level of conformity on substrates and with the capability to switch between different levels of sputtering, it allows for the deposition of films with high conformality and uniformity. The tool utilizes a high-capacity gas delivery asset for rapid gas delivery, allowing for higher throughput. This also ensures faster start-up times, allowing operators to quickly begin the process. With an easily accessible and programmable three-zone process chamber, engineers can produce sturdy, reliable films with ideal uniformity and conformality. APPLIED MATERIALS Centura AP Ultima X has superior accuracy and reliability, allowing for precise and consistent results. With an automatic calibration model in place, engineers can be assured that the results produced will always meet the desired requirements. Additionally, the equipment's modular design makes maintenance and upgrades easy. Overall, Centura AP Ultima X Reactor is an advanced device that can be used to quickly and accurately create complex structures. With a wide range of features, the device allows engineers to rapidly deposit dielectric and metal films with great precision and consistency.
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