Used JEL / JUSUNG SDP_ALD_SIN #9282351 for sale

JEL / JUSUNG SDP_ALD_SIN
Manufacturer
JEL / JUSUNG
Model
SDP_ALD_SIN
ID: 9282351
System.
JEL SDP_ALD_SIN is a type of chemical reactor that combines a fixed-bed monolithic type substrate with a large heat exchange area. This reactor is specialized for film-forming processing of II-VI compound semiconductor films. It is used for a variety of internet and telecom components, such as dielectric films for photonic and opto devices, passivate layers for active components, and optical thin-film filter materials. This reactor is composed of an alumina tube with a quartz neck, a heater, a reservoir, an inlet-outlet housing, a quartz crystal tube, and a vacuum seal. The necklace functions as a precursor by running a fluid composed of the precursor molecules along the quartz tube into the reactor. This reactor uses a process called Atomic Layer Deposition (ALD) to deposit a layer of the material on the tube. The Quartz crystal tube acts as a high temperature furnace, raising the temperature inside the reactor to between 300 and 400 degrees Celsius, depending on the application. This allows the molecules of the precursor to adsorb onto the quartz tube and form a thin film. The inlet-outlet housing and the vacuum seal allow for a vacuum of less than 10-8 Torr to be created for the process to occur. The heater also allows a precise temperature control of the furnace so that the deposited thin film can be precisely controlled and monitored. This reactor is able to deposit very thin layers of material, with layers as thin as 1.2 angstroms being able to be deposited. The uniform deposition of the material over the entire surface area of the tube is also possible, allowing for uniform and precise thin films to be obtained. Additionally, the reactor is capable of high deposition rates, allowing for a quick processing time. JUSUNG SDP_ALD_SIN reactor is perfect for the deposition of thin, uniform films of various materials, and is ideal for telecom and internet components. The ease of use and cost efficiency of this reactor make it a preferred choice for those looking to quickly and precisely deposit thin films of material.
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