Used LAM RESEARCH / NOVELLUS Altus #9098899 for sale

LAM RESEARCH / NOVELLUS Altus is a multi-chamber Vacuum Plasma Chemical Vapor Deposition (VPCVD) reactor which is used in the fabrication of integrated circuits and semiconductor devices. The reactor is suitable for high-volume production of advanced, high-performance structures, and is capable of depositing thin films with extremely uniform thickness, making it an ideal choice for the manufacturing of cutting-edge micro-electronic devices. The reactor is composed of a number of chambers connected by a transport line. The chambers include a pre-cleaning chamber, CVD chamber, etch chamber, cooling chamber, and deposition chamber. The pre-cleaning chamber employs a special heating sequence which helps to remove any dirt and oxidation from the wafer surfaces by sputtering. This is followed by the CVD chamber where reactants including either monomers or precursors are deposited on the wafer surface. This is followed by a plasma etch cycle which removes the excess chemical compounds from the surface of the wafer and helps to achieve a preferred shape. The cooling chamber is configured to equilibrate the temperature of the wafer before transfer to the deposition chamber. The deposition chamber is where the primary thin film deposition process takes place. This is achieved by passing a mixture of exothermic chemically-active gases over the wafer surface. The mixture is continually monitored and maintained, while temperature, pressure, and other conditions are strictly monitored to guarantee the optimum deposition. The deposition can take place at submicron to tens of microns thickness depending on the desired structure. NOVELLUS Altus is capable of reliable and repeatable performance, reproducing tight process control with low uniformity variations and excellent thickness uniformity down to sub-15nm resolution. Its highly automated batch design allows for high production throughput with minimum downtime. The reactor also boasts exceptional plasma control and is designed to pave the way for advanced device architectures and structures such as FinFETs, strained layers, SOI structures, and more.