Used NAURA / AKRION / NORTH MICROELECTRONICS EPEE 550 #9358479 for sale

ID: 9358479
PECVD Systems.
NAURA / AKRION / NORTH MICROELECTRONICS EPEE 550 is a reactor designed to assist in the processing of semiconductor materials. This is accomplished by combining multiple source gases with a controlled flow of surrounding gas to form the desired plasma conditions for the desired film deposition. NAURA EPEE 550 is capable of controlling the pressure, temperature, and flow rate of surrounding gas as well as the composition of source gases for film deposition. The reactor also has the ability to emit an activated gas to assist in more aggressive deposition rate requirements. AKRION EPEE 550 consists of a vacuum chamber loaded with all necessary hardware for its operation. An external gas control system is included with the chamber to mix, control, and regard the flow of gases into the chamber. The chamber is equipped to regulate gas pressures between 0-30 mTorr. A thermocouple within the chamber provides feedback to the controller, allowing for precise control of the chamber temperature. The external gas control system accesses 4 separate gas lines with a capability to mix up to 5 different gases. This allows for a wide range of gas combinations for various deposition processes. Finally, a High Frequency Generator is also included with the chamber and allows for the activation and manipulation of plasma conditions. NORTH MICROELECTRONICS EPEE 550 not only provides a quality solution to the processing of semiconductor materials, but also provides a great deal of repeatability with regards to the actual film deposition process. This is accomplished by the chamber's ability to consistently control chamber temperature, pressure, and gas composition throughout the entire process. Furthermore, EPEE 550 also includes an ammonia source that allows for more aggressive 8nm deposition processes to be performed. In conclusion, NAURA / AKRION / NORTH MICROELECTRONICS EPEE 550 is a reactor designed to assist in the processing of semiconductor materials. Its ability to control pressure, temperature, and flow rate of surrounding gas as well as the composition of source gases for film deposition provides a high degree of repeatability with the actual deposition process. Additionally, the High Frequency Generator allows for even more rigorous thin film deposition processes to be performed. This makes NAURA EPEE 550 an ideal solution for semiconductor processing.
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