Used NOVELLUS CONCEPT 2 Altus 2 #9093685 for sale
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ID: 9093685
Wafer Size: 8"
Vintage: 1999
Chamber, 8"
Facility and Interface:
Altus module locations: Dual: Port 2 and 3
WTS (backbone) facilities connection configuration: Bottom facilities installation
Remote interconnect cables: 75 feet
DLCM-S:
ROBOT ASSY, MAG7, BISYMMETRIK ARM, DLCM: 02-262359-00
Transfer module to chamber valve (SMC Valve): 02-121427-00
Throttle valve kit, DLCM-S: 04-048579-02
Loadlock gate valve, SMC: 02-133799-00
Readiness kit: Dual altus ready
Software/Controls:
Module controller type: MC2
System software (QNX): MC2
DLCM-S IOC:
0 - IOC - 4.1
2 - IOC - 4.1
3 - IOC - 4.1
Altus IOC:
0 - SIOC - 4.30
1 - SIOC - 4.30
2 - SIOC - 4.30
3 (MPD) - SIOC - 4.10
Process Chamber configuration:
SHWRHD, 200 mm, Style B: 03-00258-00
ASSY, PED, 200 mm MOER, D.3, SEMI: 02-033134-01
EXCL RING, 200 mm, 2.0 mm OH SEMI: 15-032777-00
Indexer plate, HUB: 15-034848-00
INDEXCER, WF, EXCL, OPTION, 200 mm: 15-00934-02
Spindle assembly: 02-126697-00
OPT ENDPT DET'R, MSTR, ALT-S: 04-0120458-00
Throttle Valve MKS (Pressure control valve): 27-250285-00
Gate valve, vat: 60-10015-00
Gas box configuration (CESCVD02177B):
Manifold A 1: Aera FC-7800CD, AR/2 SLM
Manifold A 3: Aera FC-7800CD, H2/20 SLM
Manifold B 6: Aera FC-7800CD, C2F6/2 SLM
Manifold B 7: Aera FC-7800CD, O2/2 SLM
Manifold D 2: Aera FC-7800CD, SiH4/100 SCCM
Manifold H D: Aera FC-7800CD, Ar/20 SLM
Manifold W 4: Aera FC-7800CD. AR/20 SLM
Manifold W 5: Aera FC-7800CD, WF6/1 SLM
Manifold C 8: Aera FC-7800CD, Ar/10 SLM
Manifold C 9: Aera FC-7800CD, H2/20 SLM
Baratron:
Altus, CAP MANOMETER, HEATED 100 TORR: 27-10340-00
Altus, CAP MANOMETER, HEATED 10 TORR: 27-10343-00
Altus, Backside, CAP MANOMETER< HEATED 100 TORR: 27-10340-00
DLCM-S, LOADLOCK, CAP MANOMETER, HEATER 100 TORR: 27-10340-00
DLCM-S, TM, CAP MANOMETER, HEATED 100 TORR: 27-10340-00
Supporting remote units:
(1) Process pump per process chamber: BOC Edwards, IH1000 - x2 for process pump typical
(1) Pedestal pump per process chamber: BOC Edwards, i80 - x2 for pedestal pump typical
(1) TM pump per system: BOC Edwards, i80 - x1 for TM pump typical
(1) LL pump per system, BOC Edwards, i80, x1 for LL pump typical
1999 vintage.
NOVELLUS Concept 2, Altus 2 is a chemical vapor deposition (CVD) reactor, or chamber, designed to deposit thin films of high purity materials onto the surface of a substrate. The Altus 2 is capable of depositing a variety of materials, such as epitaxial silicon, poly-silicon, oxides, nitrides, and carbides at high temperatures ranging from 300°C to 650°C. NOVELLUS CONCEPT 2 Altus 2 is composed of a module base, a process chamber with integrated circuitry, a door assembly, a power supply, a gas manifold, and various other components. CONCEPT 2 Altus 2 reactor consists of a cylindrical stainless steel chamber, in which the substrate is placed. The chamber walls are made of 316L stainless steel and have a thickness of 4.8 mm. The walls are tapered inward towards the bottom of the chamber, allowing for the efficient distribution of heat. The substrate rests on top of the aluminum heatblock where it is heated up to the desired temperature. The source gas is introduced at the chamber's upper section (max of 8 inches away) through a delivery system. NOVELLUS CONCEPT 2 Altus 2 reactor can be operated either in a DC mode (direct current) or an RF mode (radio frequency). In the DC mode, the substrate is maintained at a low-voltage potential, allowing the formation of a continuous film of deposited material, while the RF mode forms metal particles in the film layer. The power supply delivers a current of up to 400 A (DC mode) and can be adjusted to vary the deposition rate. CONCEPT 2 Altus 2 has a built-in Force-Based Flow Control (FBFC) system which enables precise delivery of process gases, while the Gas Mix Ratio Diode Array Detectors (GM-RADs) continuously monitor the deposition environment. The operating parameters of the reactor can be adjusted using the built-in control system, making it possible to switch between different recipes of materials to be deposited. NOVELLUS CONCEPT 2 Altus 2 also has an additional three gas manifold lines with the capability of introducing up to three reactive gases simultaneously into the chamber. In conclusion, CONCEPT 2 Altus 2 is a highly versatile and efficient CVD reactor, capable of depositing thin films of high purity materials onto substrates under highly controlled operating conditions. It features several design and safety features that make it's use both reliable and cost effective.
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