Used NOVELLUS CONCEPT 2 Altus #9095522 for sale

Name: NOVELLUS CONCEPT 2 Altus
Brand: NOVELLUS
SKU: 9095522
Availability: SoldOut

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Reactors

Manufacturer

NOVELLUS

Model

CONCEPT 2 Altus

ID: 9095522

Wafer Size: 8"

Chemical vapor deposition (CVD) system, 8" Process: Shrink DLCM Non-shrink process modules SSD Module: Dual chamber Wafer type: Notch SECS/GEM Software: No Standard chamber Mainframe options: System controller: MC3 Signal tower: No AC Power rack: Standard Interconnect cables: No DLCM User interface: Adjacent to system Transfer robot type: BROOKS MTR 5 Paddle type: Standard Shuttle type: Standard Cassette type: No Indexer type: Type II Cool station: No SMIF loader type: No Manometer: Standard 100 Torr Facilities configuration: Either Control system: QNX4 Pump electrical interface: No Missing parts: Animatics type Leak check shutoff valve Process module A: Altus Controller type: MC3 IOC Version: 3.02 Gate and throttle valve: Internal, non-heated Process manometer: 100 Torr non-heated Heater pedestals: D-Type Shower heads: Yes MOER Rings: No Spindle assy seal type: Ferrofluidic X-Y Centering station: Yes Viewport window: Sapphire RF Match: Trazar Chamber process: Tungsten plug fill Full face coverage Module location: Center port Standard footprint Facility connections: Rear of chamber Module location: Center port (default) Missing parts: RF High frequency generator Endpoint detector Gas box: Standard 10 channel MFC Type: BROOKS 5964 MFC Size and location Channel Gas Flow (SLM) 1 Argon 2 SLM 2 Sih4 50 sccm 3 Hydrogen 20 SLM 4 Argon 20 SLM 5 Wf6 Missing 6 C2F6 2 SLM 7 Oxygen S SLM 8 Argon 10 SLM 9 Hydrogen 20 SLM 10 Nitrogen 10 SLM Process module B: Altus Gate and throttle valve: Internal, non-heated Process manometer: 100 Torr non-heated Heater pedestals: D-Type Shower heads: Yes MOER Rings: No Spindle assy seal type: Ferrofluidic X-Y Centering station: Yes Viewport window: Sapphire RF Match: Trazar Chamber process: Tungsten plug fill MOER Rings Sequel process module A center port Standard footprint RF Generator: No Optical endpoint detector: Yes Facility connections: Rear of chamber Module location: Right port Missing parts: RF High frequency generator Controller type Gas box: Standard 10 channel 10 Gas, missing 9 gas sticks MFC Size and location Channel Gas Flow (SLM) 5 Wf6 750 sccm (1-10) Missing.

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NOVELLUS CONCEPT 2 Altus (C2A) is a high-performance reactor designed for plasma etching, deposition, and sputtering applications in the semiconductor industry. The equipment utilizes patented vertical magnetic technology that combines high power with a large electrode area to achieve superior process stability. The C2A reactor is powered by a 30 kW HF generator which allows it to process large-area substrates with faster throughput than a standard reactor. The reactor also features an advanced auto-tuning system that enables it to quickly and accurately optimize the plasma process parameters for each wafer processed. The C2A features a unique vertical magnetic field that is capable of producing higher plasma temperatures and lower density than a standard reactor. This higher energy plasma enables improved etch rates and improved uniformity. The C2A also utilizes an adjustable upper electrostatic shield to prevent plasma contamination and a floating chuck to maintain a consistent substrate temperature. The C2A also features multiple chambers for greater processing flexibility. This allows users to perform multiple processes simultaneously or in sequence. The C2A's advanced gas management unit ensures gas flow uniformity and total gas control. This ensures that the process parameters remain consistent regardless of substrate size or number of substrates processed. The C2A is also equipped with an advanced control machine that allows users to monitor, adjust, and optimize the process parameters in real-time. This tool utilizes an advanced user interface for easy operation and software that enables users to create and store process recipes for different substrates and applications. CONCEPT 2 Altus (C2A) is a highly reliable, advanced reactor designed for semiconductor processing in the plasma etch, deposition, and sputtering arenas. Its 30 kW HF generator, adjustable upper electrostatic shield, and floating chuck ensure superior process stability while its vertical magnetic technology, adjustable gas management asset, and superior control model ensure superior performance. The C2A is the ideal choice for any semiconductor processing facility.