Used NOVELLUS CONCEPT 2 Altus #9202875 for sale

Manufacturer
NOVELLUS
Model
CONCEPT 2 Altus
ID: 9202875
Wafer Size: 8"
CVD System, 8" (2) Chambers.
NOVELLUS CONCEPT 2 Altus is a next generation plasma reactor used for high-precision etching and deposition of thin films for semiconductor manufacturing. This reactor was developed to optimize production for advanced devices, such as FinFETs, at the 20nm node and below. It features features a high aspect ratio chamber and utilizes inductively coupled plasma (ICP) to generate plasma discharges. CONCEPT 2 Altus' high aspect ratio chamber is designed to enhance precision deposition and etching of different materials. With a 10:1 aspect ratio, the chamber allows a greater separation between electrodes, which increases the stability of the electric fields used to generate plasma discharges. It also provides uniform ion bombardment across its full wafer surface. Additionally, the chamber features a slimmer vertical profile, allowing for faster transitions between different processes. Additionally, NOVELLUS CONCEPT 2 Altus is powered by an ICP source that is optimized for low-proximity sheath control for better etch uniformity. By controlling the ICP source, it can create plasmas with wide power ranges from ultra-low to high power, allowing for exact control of the etching and deposition of different materials. CONCEPT 2 Altus also utilizes efficient technologies, such as cycle times that are up to 30% faster than previous systems, and its wafer hand-off system, which increases the efficiency of wafer loading. It also features load-lock technology, which allows for fast replenishment of process gas and clean dry air to reduce processing time even further. Furthermore, the system integrates advanced intelligent diagnostics and alarms, which allow for predictive maintenance. NOVELLUS CONCEPT 2 Altus is a comprehensive, next-generation plasma reactor system designed to provide efficient, high-precision etching and deposition capabilities for the manufacture of advanced semiconductor devices. It utilizes ICP technology to generate plasmas with accurate control, a high aspect ratio chamber for uniform ion bombardment, efficient technologies for faster cycle times, and advanced intelligent diagnostics to ensure optimal performance.
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