Used NOVELLUS CONCEPT 2 Dual Sequel Express #9299473 for sale
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ID: 9299473
System
Dual EPD
MC3 Module controller
Heater: 19-00154-01
Clean method: Insitu clean (C2F6)
ADVANCED ENERGY RFG 5500 HF Generator (Model no: 315051-115)
ADVANCED ENERGY PDX 1400 LF Generator (Model no: 3156024-141B/C)
Al 3003 Showerhead (Model no: 16-033931-00)
RF Match: Mercury 3013NV (Model no: 3150274-003/008)
Throttle valve type: MKS (60-126668-00)
Gate valve type: HVA (34-260166-00)
Process gauge: MKS (627A11TBC)
ATM Gauge: MKS (627A13TBC)
ISO Box: HIB Board (04-355636-00)
High reliability ferrofluidic spindle (02-106507-00)
ADM RF Switch kit
Clean method
Insitu clean (C2F6)
ILDS for Chemical-TEOS supply system
Gas box:
MFC Model: Aera FC-7800CD
O2 20 SLM
C2F6 2 SLM
SiH4 1 SLM
N2A 5000 SCCM
N2B 10 SLM
N2O 20 SLM
N2O_AUX 1 SLM
PH3 2 SLM
NH3 10 SLM.
NOVELLUS CONCEPT 2 Dual Sequel Express Reactor is a chemical vapor deposition (CVD) equipment used to deposit ultra-thin layers of materials, such as oxides and nitrides, onto a range of substrates. The device is equipped with two separate Sequel processing chambers, each of which includes four Dual EndurTM process modules. The Sequel chambers are designed for high-throughput processing, enabling users to deposit thin films at remarkably fast rates compared to alternative chemical vapor deposition systems. The Concept 2 boasts a high degree of versatility, allowing users to process substrates up to 200×200 mm in size with multiple precursors in a single batch. The Dual Endur process modules provide uniform deposition and flow rate control, and feature an innovative diamond-like coating that ensures long service life and years of reliable operation. The precision deposition process is highly repeatable, ensuring consistent layer thickness across the entire surface of the substrate. The Concept 2 also comes equipped with a modular load lock system, allowing for quick and easy material loading and unloading. The unit features a low pressure load lock, enabling materials to transition between vacuum and ambient pressure without the need for additional nitrogen source. The load locks are designed to accommodate a variety of substrate holders, ranging from plain wafers to full-frame cassettes. In terms of process control, the Concept 2 employs a number of advanced technologies, such as an LCD touchscreen user interface, an automated recipe editor, and real-time temperature and pressure monitoring. The device also offers Ethernet connectivity, allowing users to access and control the machine remotely through a computer network. Overall, CONCEPT 2 Dual Sequel Express Reactor makes an ideal choice for efficient and precise deposition of thin films onto various substrates. The device's high throughput and superior process control make it well-suited to both research and production environments, providing reliable results while lowering cost and saving energy.
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