Used NOVELLUS CONCEPT 2 Dual speed-S #9097741 for sale
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ID: 9097741
Wafer Size: 6"
Vintage: 1996
CVD System, 6"
Loadlock baratron: Tyran general
Loadlock dry pump: EDWARDS QDP40
Slit valve: SMC L-motion
TM Dry pump: EDWARDS QDP40
TM Throttle valve: Tyran general
TM Baratron model: Tyran general
TM Robot: MTR 5
TM Robot blade: Metal
Wafer sensor: Existence
Host interface: SECS
Module controller: MC1
12" LCD Front monitor
Module A: Shrink, STI/IMD
Manometer 1: Tyran general
Manometer 2: Tyran general
TMP Pump right: TG1113MBW-09
TMP Pump left: Osaka vac TG1113M
TMP Controller: TD 701/1101
Throttle valve: VAT 14046-PE24-0005
HF Generator: ENI OEM-50N-11601
LF Generator: ENI CLF-5000/400
Module dry pump: EDWARDS QDP80
Pump booster: EDWARDS EH1200
RF Match: TRAZAR AMU10E-1
Chamber gas box:
MFC 1 Ar 500 SCCM BROOKS 5964
MFC 2 O2 500 SCCM BROOKS 5964
MFC 3 NF3 1 SLM BROOKS 5964
MFC 4 SIH4 200 SCCM BROOKS 5964
MFC 5 SIF4 200 SCCM BROOKS 5964
Module B: Shrink, STI/IMD
Manometer 1: Tyran general
Manometer 2: Tyran general
TMP Pump right: TG1113MBW-09
TMP Pump left: Osaka vac TG1113M
TMP Controller: TD 701/1101
Throttle valve: VAT 14046-PE24-0005
HF Generator: ENI OEM-50N-11601
LF Generator: ENI CLF-5000/400
Module dry pump: EDWARDS QDP80
Pump booster: EDWARDS EH1200
RF Match: TRAZAR AMU10E-1
Chamber gas box:
MFC 1 Ar 500 SCCM BROOKS 5964
MFC 2 O2 500 SCCM BROOKS 5964
MFC 3 NF3 1 SLM BROOKS 5964
MFC 4 SIH4 200 SCCM BROOKS 5964
MFC 5 SIF4 200 SCCM BROOKS 5964
DLCM Gas MFC
MFC1: UPC, Ar/He, 1 SLM, BROOKS 5866 RT
MFC2: UPC, Ar/He, 1 SLM, BROOKS 5866 RT
MFC3: Ar/He, 500 SLM, BROOKS 5964
SMIF Interface: No
PET Module: No
UPS Power: 120 V, 3 Ph, 3 wires
Main system: 208 V, 3 Ph, 5 wires
Currently de-installed
1996 vintage.
NOVELLUS CONCEPT 2 Dual speed-S Reactor is a chemical deposition chamber used in semiconductor fabrication. It is capable of delivering both low- and high-temperature chemical vapor deposition (CVD) processes, enabling processing of a wide range of dielectric, oxynitride and metal films. The dual chamber design allowsusers to run two applications (high and low temperature) simultaneously or independently, enabling batch precursor delivery and deposition while maximizing process throughput. CONCEPT 2 Dual speed-S Reactor features a versatile high temperature CVD chamber which can process dielectric and metal films at temperatures up to 1000°C. It also features a low temperature CVD chamber which can process oxynitride and dielectric films at temperatures up to 450 ˚C. Both chambers are designed for use with a variety of starting precursors, and feature multiple recipe post-processing options. NOVELLUS CONCEPT 2 Dual speed-S Reactor is built with advanced, robust technological components that provide accuracy, sampling and control. The low temperature CVD chamber uses patented forwardDirect™ injection technology, which enables faster and more efficient deposition, as well as uniform film deposition and high yields. The high temperature CVD chamber is designed with a uniquely designed gas manifold for tight temperature control and uniform deposition across a wide area. Another feature of CONCEPT 2 Dual speed-S Reactor is its automated processes. The patented robotic conveyor system allows the reactor to automatically move wafers, substrates, materials and components through the system, while the robotic assist arm ensures accurate and uniform loading of the pre-processing chamber and the process vessels. The pre-processing chamber also allows for blanket processing before loading the substrates into the process vessel, in order to ensure uniform film deposition. Overall, NOVELLUS CONCEPT 2 Dual speed-S Reactor is a reliable, efficient and versatile chemical deposition chamber. The ability to perform both low and high temperature CVD processes makes it the ideal choice for a variety of semiconductor fabrication processes. Its advanced technological components, automated processes and forwardDirect™ injection technology provide an accurate, uniform and high yield operation.
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