Used NOVELLUS Concept 2 Dual Speed #9206614 for sale

NOVELLUS Concept 2 Dual Speed reactor is an advanced plasma-enhanced chemical vapor deposition (PECVD) equipment that is designed to enable the deposition of a wide range of thin-film materials on wafers and substrates. The system is designed to provide high throughput performance, reduce reaction chamber cycle times, and enable the deposition of a variety of materials under precise process control. The unit utilizes two reaction chamber speeds, dual speed technology, that is intended to enable the achievement of both high throughput and flexibile material deposition capabilities. Reaction chamber speeds are optimized for each deposition material in order to reach optimal deposition thickness and uniformity results. The high-speed mode works best for processes such as deposition of hard materials that do not require a long reaction chamber cycle time. The low-speed mode is designed to be used for depositing thin film materials that require precise deposition control. The machine utilizes a choice of scheduling options that can be used to optimize process cycle times: maximum throughput, infinite load, or cyclic scheduling. The maximum throughput option is intended to optimize production volumes by enabling the longest reaction chamber cycle time available. The infinite load option is designed to enable the optimization of substrate uniformity and uniformity across the wafer by using the shortest reaction chamber cycle available. Meanwhile, the cyclic scheduling option can be used to deposit a variety of thin films in one run, allowing for rapid switching between deposition materials. The tool is further enhanced by its long lifetime RF components, which are designed to deliver a long process life. The asset also utilizes advanced chamber configurations and process controls to enable flexibility in the model's operation, while maintaining process consistency. Finally, the equipment enables the use of a wide range of additional components and procedures, such as in-situ chamber cleaning and substrate surface treatments, in order to optimize the thin-film deposition process. By leveraging Concept 2 Dual Speed technology, wafer and substrate production establishments can expect to benefit from increased material deposition capability, reduction in cycle times, and increased yield across a wide variety of thin-film deposition processes. This advanced plasma-enhanced chemical vapor deposition system is designed to ensure that users are able to deliver an increased level of thin-film deposition capability with improved throughput and process uniformity.