Used NOVELLUS CONCEPT 2 Sequel #9402240 for sale
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ID: 9402240
System
DLCM-S
BROOKS AUTOMATION Magnatran 7
BROOKS Robot teach pendant
Indexer robot teach pendant
MC3 Module controller
Loadlock Indexer:
Indexer II
Type B Controller
Type 2 Robot
Process module A and B:
ADVANCED ENERGY RFG 5513 HF Generator
ADVANCED ENERGY PDX 1400 LF Generator
Frame assy: Sequel-X
Spindle assy type: Ferrofluidics
RF Match type: ADVANCED ENERGY Mercury 3013
MFC AERA FC-7800CD
Gas Boxes:
MFC Number / Gas / Size
MFC 1 / SiH4 / 1 SLM
MFC 5 / He / 10 SLM
MFC A / N2O / 20 SLM
MFC 2 / N2 / 5 SLM
MFC 6 / NH3 / 10 SLM
MFC 9 / NF3 / 5 SLM
MFC B / N2 / 10 SLM
MFC 7 / N2O / 1 SLM
MFC 4 / PH3 / 2 SLM
MFC 8 / O2 / 20 SLM.
NOVELLUS CONCEPT 2 Sequel is a high temperature, chemical vapor deposition (CVD) reactor designed specifically for advanced thin film deposition processes. It is a dual-chamber system with an upper chamber featuring a mass flow controller (MFC) for gas delivery, a heated showerhead for uniform flux delivery, and a plasma generator for ionization and RF excitation. The lower chamber of the reactor contains the susceptor that is heated to substrate deposition temperature, and an electronic pressure controller (EPC) to maintain a stable vacuum level inside the reactor. The system is designed with a series of process flow paths and temperature control mechanisms, to allow temperature stability and control, and uniformity of the thin film deposition. CONCEPT 2 Sequel uses a combination of gas flows and plasma excitation to deposit thin films of various materials. It features the ability to deposit thin films of variety of different materials, such as polysilicon, aluminum and copper, with high purity and resolution. The upper chamber of the reactor is where the gas flows operate, and the lower chamber is where the substrate deposition occurs. The heated showerhead is used to spread the heated reactant gases evenly over the substrate. RF excitation of the reactant gases creates a plasma, which increases reactivity and increases deposition rate and uniformity. The electron pressure controller (EPC) operates in the lower chamber to maintain a constant pressure in the reactor at the desired level. Temperature control is also a key feature of NOVELLUS CONCEPT 2 Sequel. The susceptor is heated in the lower chamber, and temperature is distributed uniformly through control rods. The temperature monitoring system allows the user to adjust temperature levels, and the reaction rate, to ensure high-quality deposition of the thin film. CONCEPT 2 Sequel is designed to be easy to use, with an intuitive user interface and automated monitoring and control. It is a versatile tool for thin-film deposition, with high speed, uniformity and reliability for advanced applications.
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