Used NOVELLUS CONCEPT 2 Speed #9093692 for sale
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ID: 9093692
Wafer Size: 8"
Vintage: 2005
CVD, HDP System, 8".
Wafer shape: Flat
SMIF Interface: No
PET Module: Yes
Aligner option: No
System main power:
208 V, 50/60 Hz, 3 phase, 5 wires
3-Phase full load current: 10 amps
Max component current: 5 amps
System UPS Power: Yes
Silt valve insert: No
Silt valve type: SMC L-Motion
TM Turbo pump bodel: Pfeiffer TMH260
TM Throttle valve model: MKS
TM Baratron model: MKS
Loadlock baratron model: MKS
IOC Version: V 4.1
TM Robot type: Mag 7
TM Robot blade: Ceramic
Wafer sensor: Existence
Signal tower: Yes
EMO's: Push button
Module controller: MC1
Host interface: SECS
Front monitor: LCD Monitor
MFC1, Ar/He, 1 SLM, Brooks 5964
MFC2, Ar/He, 1 SLM, Brooks 5964
MFC3, Ar/H2, 500 Sccm, Brooks 5964
Sys con: C2-SCON-6582
Signal cable
Chase computer
Module A, B, and C:
Chamber type: Shrink
Chamber process: ILD
Process clean type: In situ
Module controller: MC1
Module turbo pump: Pfeiffer TPH2101 PCX
Manometer 1 (10 T): MKS
Throttle valve: MKS
ESC / Dome cooling: PCW
Temp monitoring: NTM500C
Manometer 2 (10 T): MKS
HF Generator: AE RFG5500
LF Generator: AE PDX 5000
RF Match: Trazar AMU10E-2
Manometer 3 (100 m): MKS
IOC Version: 4.2
Dual clean injector kit: Yes
Injector type: Single
Louvered screen: No
Pedestal lift type: Dual position
Foreline type: Standard
NF3, 1 slm, Aera FC-D980C
Ar, 500 sccm, Aera FC-D980C
O2, 500 sccm, Aera FC-D980C
H2, 2 slm, Aera FC-D980C
HE, 500 sccm, Aera FC-D980C
SiH4, 200 sccm, Aera FC-D980C
Deinstalled
2005 vintage.
NOVELLUS CONCEPT 2 Speed (C2S) is a two-chamber chemical vapor deposition (CVD) reactor designed specifically for deposition of thin films for the semiconductor industry. It is used to deposit metals and compounds such as silicon, tungsten, and nitrides onto integrated circuits, or ICs. The C2S is designed to provide users with a reliable, high-rate tool that is tailored specifically for advanced process optimization. The C2S reactor has two chambers, separated by a divide wall, and uses a chemical vapor injection equipment to introduce reactants into the processing chamber. The two chambers are designed to operate at different pressures, temperatures, and flow rates simultaneously. This allows for the optimization of all the parameters necessary to obtain the desired thin-film deposition rate and uniformity of coverage. The C2S utilizes ultra-high purity argon to pressurize the chamber and to promote smooth gas flow, as well as a heated (2200°C) substrate and susceptor system to achieve the highest deposition rates. The unit is designed to be extremely precise, with process control provided at multiple points to ensure the highest level of uniformity on the substrate surface. A computerized controller is also provided to allow users to easily monitor and adjust the pressure, temperature, and flow-rate parameters as needed. The C2S is equipped with several advanced technologies to enhance the process, including NOVELLUS Close Space Sublimation (CSS) technology. This technology allows users to directly deposit multiple layers of tungsten, and other refractory metal films, at a higher deposition rate than traditional CVD processes. It also eliminates the need for etching steps, resulting in both a lower cost and shorter cycle time. In addition, the C2S can be integrated with NOVELLUS Endura CVD Machine, which is designed to provide uniform coverage at higher deposition rates with improved process control accuracy. This tool also allows users to to monitor, control, and optimize the deposition parameters and processes in real time, resulting in better defect control and yield increases. The high cost/performance ratio and customizable features offered by the C2S make it an ideal choice for a wide range of advanced manufacturing applications. The added process control allow users to run the asset at higher speeds while still maintaining the desired uniformity on the substrate surface. With its reliable performance and customization features, CONCEPT 2 Speed reactor provides users with an efficient and cost-effective solution for producing advanced thin-film devices.
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