Used NOVELLUS CONCEPT 2 #9004475 for sale
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ID: 9004475
Wafer Size: 8"
Vintage: 2007
CVD system, 8"
Dual-Speed-S
SiO2 Process chamber
Gas configuration:
1 Ar 500 sccm
2 O2 500 sccm
3 NF3 1 slm
4 SiH4 200 sccm
5 He 500 sccm
8 H2 2 slm
MFC:
Aera/FC-7800CD
NC, Metal Seals
1/4”MVCR, 9pin
D-Type Conn
10μin Ra
(2) SPEED-S Module (STI):
Module Controller
Reactor Chamber
Gas Box
Exhaust System
Pressure Measurement System
LPB (Local Power Box)
RF Supply & Output System
APC (Auto Pressure Controller)
Vent N2 Supply System
He Supply System for ESC
Temperature Measurement (NTM3)
Cooling Water Supply System
Compressed Air Supply System
DLCM-X Module (Hi/Low Type) with SMIF:
Standard SMIF
TM Aligner
System Controller (UI I/F)
Module Controller
(2) Load-lock Chambers
Transfer Chamber
Transfer Robot (Indexer for L/L x 2, Mag for TM x1)
Slit Valve
Turbo Pump (TMH260)
Purge Gas, Vent Gas Supply System
Cooling Water Supply System
Compressed Air Supply System
Exhaust System
Pressure Measurement System
Cooling Station
LPB (Local Power Box)
APC (Auto Pressure Controller)
RF Generator
HF Generator: (2) RFG 5500/AE
LF Generator: CLF-5000/COMDEL
Module single service drop, MSSD
Δ-Y Transformer (Type 3-628941, 100KVA)
UPS (“NemieLambda”PS-3210, “Hakkosha” 3WTC-10K)
(2) SMIF Robots (Asyst)
Missing / defects:
Ch-1: HF generator failure, No HF Matching, No Coaxial Cable
Ch-2: Isolation valve failure (100mTorr)
2000 vintage.
NOVELLUS CONCEPT 2 reactor is an advanced piece of semiconductor fabrication equipment designed to improve the quality and efficiency of production. It is a chemical vapor deposition (CVD) equipment which is used to deposit thin films of materials, such as polysilicon, on a wafer. This deposition process is an essential step in the production of integrated circuit devices such as microprocessors. CONCEPT 2 is a precision engineered tool developed by NOVELLUS Systems. It features a high-resolution, uniform silicon deposition process, as well as multi-process chamber etch capabilities. It utilizes advanced plasma chamber technology, enabling etching and deposition processes to be completed simultaneously, as well as providing complete control over the composition and chamber conditions. This provides extremely uniform deposition rates and film thickness, eliminating the need for additional adjustment steps. NOVELLUS CONCEPT 2 reactor uses a high-frequency generator and specialized induction coils to generate a large-area, uniform plasma. The plasma is then passed into a multi-stage plasma chamber, where it energizes the precursors delivered into the chamber. The combination of the energetic plasma and the chemistries react to produce the desired silicon film on the wafer. This eliminates the need for highly specialized and expensive pulsed magnetron coaters. CONCEPT 2 reactor features a computer-controlled process system, and incorporates advanced diagnostic capabilities and temperature control. An inert gas atmosphere is used to maintain purity levels within the chamber itself, and the vacuum unit has an extremely rapid response time, allowing for quick in-process adjustments. The data acquisition machine is also capable of power monitoring, chamber pressure readings, and temperature measurements, ensuring the optimal environment is maintained. NOVELLUS CONCEPT 2 reactor offers outstanding film uniformity and control, enabling precise control over process parameters. This results in excellent quality products with extremely high yields and yields of workable units. In addition, the capability to produce multiple deposition layers in a single run makes CONCEPT 2 extremely versatile. This makes it an excellent choice for semiconductor manufacturers looking to increase their production efficiency and reduce waste.
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