Used NOVELLUS CONCEPT 2 #9167960 for sale

NOVELLUS CONCEPT 2 is a high-performance etch and deposition reactor optimized for re-entrant chambers. This equipment enhances etch and deposition processes for advanced lithography applications. It offers superior substrate uniformity, increased process flexibility, and excellent process control. CONCEPT 2 uses an optimized, volume-averaged load balance, which reduces the amount of pressure drop due to load present in the system. The load balance is independent of the pressure in the unit, resulting in exceptional uniformity across the substrate. It further provides excellent process flexibility, allowing for rapid process changes and wafer retooling. A wide variety of gases can be used for etch and deposition processes without having to reload the process gas systems. This level of flexibility permits the use of multiple chamber configurations. NOVELLUS CONCEPT 2 utilizes RF power technology for deposition. This machine offers superior controllability over the deposition rate across the substrate. By varying the RF power, the deposition rate can be precisely adjusted for varying deposition rate requirements. It also allows for lower than conventional deposition rates for improved process performance, better wafer uniformity, and higher throughput. CONCEPT 2 offers an innovative load lock design that reduces process cycle times. It also features a novel inductively coupled plasma (ICP) source design, which enables dramatic process uniformity improvements. This tool also utilizes a new motor design and drive architecture, which can reduce vibration levels while increasing sputter uniformity. In short, NOVELLUS CONCEPT 2 reactor is an advanced, highly capable etch and deposition asset, designed for use in re-entrant chambers. It offers superior substrate uniformity, process flexibility, process control, and throughput. It is optimized for use with both conventional and advanced process technologies, providing an excellent platform for modern etch and deposition applications.