Used NOVELLUS CONCEPT 2 #9235678 for sale

NOVELLUS CONCEPT 2 is a reactor for chemical vapour deposition (CVD) used in the semiconductor industry. It is a single-wafer, batch-process, multi-chamber CVD reactor that has been designed to enable rapid process development, process qualification and high throughput yielding production. CONCEPT 2 allows flexibility and selectivity to the deposition process due to its unique multichamber architecture and wide range of chamber compatible process gases. NOVELLUS CONCEPT 2 is a semi-enclosed two-zone design. The main chamber is comprised of a bottom chamber and a top chamber. The top chamber is the main process chamber, where the CVD process takes place. A wide variety of conformal process gases can be introduced into the top chamber by two gas routers, allowing extremely precise control of the chemical components in the chamber and adjusting the temperature of the wafer during the deposition process. The bottom chamber is filled with moisture exchange gas that is designed to reverse charge the chamber to prevent oxidation and particle accumulation. CONCEPT 2 is outfitted with an array of robotic capabilities. The robot arm is designed to move the substrate wafer from one chamber to the next chamber, to introducer it into the top chamber, and to introduce and move other components such as gas lines, liner pipes, heaters, and shields. The robot is also designed to be able to mime non-symmetric movements, allowing an increased flexibility for chemical fluxes and processes. NOVELLUS CONCEPT 2 reactor is equipped with an advanced process control system (APC). The APC can be programmed to make precise movements of the wafer, the robotic arm and the process gases. The APC also monitors conditions in the reactor and in process gases such as temperature, plasma pressure, and flow rate. This control allows for a high degree of accuracy in the process parameters, improving the speed and quality of the CVD process. In conclusion, CONCEPT 2 reactor is a unique piece of equipment, designed to allow control of the temperature, speed, and accuracy of the chemical vapour deposition process. Its two-zone design and advanced process control system enable rapid process development, process qualification and high throughput production.