Used NOVELLUS Concept 3 Speed Max #9352258 for sale

NOVELLUS Concept 3 Speed Max
ID: 9352258
Wafer Size: 12"
Vintage: 2011
HDP CVD System, 12" 2011 vintage.
NOVELLUS Concept 3 Speed Max reactor is a state-of-the-art chemical vapor deposition (CVD) equipment that is used to deposit thin films of materials onto substrates. The system is designed to deposit dielectrics, metals, and other materials at high rates and uniformity, allowing for the production of high-performance devices. This unit utilizes a versatile multi-zone source technology to provide improved homogeneity and control of parameters across the substrate. The machine consists of a single, all-in-one platform consisting of three stages. The first stage is the Radio Frequency (RF) plasma source, which consists of a plasma discharge source, a multi-zone RF capacitively coupled plasma grid, and a multi-zone magnet for enhanced homogeneity control. The second stage is the CVD chamber, which contains a wafer chamber heating head, a deposition head, and a phenyl-sampler. The wafer chamber heating head is used to heat the wafer in order to ensure uniform deposition of the material. The deposition head contains the process source, which is used to introduce the material into the chamber at the desired rate. The phenyl-sampler is used to measure the reactant concentration and to monitor the deposition process. The RF plasma source, CVD chamber, and phenyl-sampler work together to provide Concept 3 Speed Max with optimized deposition performance. The entire tool is designed for high output rates and a highly uniform deposition of thin films, allowing exceptional process repeatability and control. In addition, the asset also offers cycle times of less than one minute per wafer, making it a cost-effective solution for a wide range of production needs. NOVELLUS Concept 3 Speed Max is an excellent choice for those looking to improve their production efficiency. Its combination of RF plasma source, CVD chamber, and the phenyl-sampler provide a powerful platform for achieving high-performance devices through superior and controlled deposition of thin films. The model's cycle times, controllability, repeatability, and homogeneity make it an ideal solution for any film deposition situation.
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