Used NOVELLUS Concept 3 Speed NEXT #9170858 for sale

NOVELLUS Concept 3 Speed NEXT is a state-of-the-art reactor for the formation of ultra-thin films on substrates. This reactor is based on a 3-speed cycle approach, and is designed to shorten the CVD process by up to 50%. It is capable of forming the thin films and steps in just a few seconds, which saves time and money. Concept 3 Speed NEXT reactor consists of three independent sources and a turret head. The three sources are helium, nitrogen, and argon. The turret head is equipped with three electrostatic confinement ports, two for applied ionization plasma sources, and one for neutralization of species. The plasma source enhances the reaction speed and enhances the film properties. The main benefits of the three-source concept are uniform film thickness, reduction in thermal damage, and complete control of deposition parameters. The three-speed cycle approach works by changing the pressure, temperature, and reactant concentration. This allows for the formation of very thin films or steps in short deposition times. The three-speed cycle ensures that the films can be deposited uniformly over the entire substrate. This is made possible through the balanced temperature distribution of the three sources, the enhanced reactant diffusion, and the low thermal damage to sensitive substrates. NOVELLUS Concept 3 Speed NEXT reactor was designed to increase throughput while improving the overall quality of the film formation. It has a high throughput capability and allows for a faster response to changing demands in a production environment. Additionally, it offers improved process control, uniform film thickness, and improved uniformity across the wafer surface. Overall, Concept 3 Speed NEXT reactor is a powerful and flexible tool for creating highly uniform films and steps in advanced device production. It offers both cost and time efficiencies that cannot be matched by other technologies. This makes it ideal for a wide range of applications that require extreme precision and reliability.