Used NOVELLUS CONCEPT 3 #9262617 for sale

NOVELLUS CONCEPT 3
Manufacturer
NOVELLUS
Model
CONCEPT 3
ID: 9262617
CVD System.
NOVELLUS CONCEPT 3 is a production-level chemical vapor deposition (CVD) reactor featuring advanced plasma technology to meet the demands of high-end semiconductor fabrication. CONCEPT 3 reactor is specifically designed for advanced materials and deposition processes related to high device complexity, dielectric films, various thermal oxide layers, and low-k dielectrics that require sophisticated first-time yields and low defect production. NOVELLUS CONCEPT 3 reactor is capable of handling wafers up to 300mm in size and featuring variable plasma power options, with high power capabilities up to a maximum of 1000W. Its design is based on an integrated vertical bias bias electrode that features an innovative plasma ionization that promotes a stable and uniform plasma discharge. A layer of rare earth gate oxide (REE) provides greater uniformity and stability. CONCEPT 3 utilizes a range of automated control systems designed to ensure that deposition recipes remain within given target and tolerance ranges. Through the use of intelligent sensors, uniformity and continuous monitoring of vacuum and plasma parameters are assured. These controls provide a safe and reliable deposition environment to ensure consistency and reliability. NOVELLUS CONCEPT 3 reactor is designed for rapid deposition rates, high levels of metal content, and advanced substrate compatibility. It can accommodate a wide variety of material sources, including a selection of high-quality oxide films, nitrides, silicides, tungsten carbides, and metals such as molybdenum, tantalum, and tungsten. The reactor is capable of preconditioning substrates and generating tight process control. This reactor also offers excellent temperature control and performance optimization, with high temperature uniformity, fast thermal ramp rates, and repeatable process results. CONCEPT 3 is able to create uniform etch profiles and features a patented triple frequency plasma source, enabling advanced hole narrowing, void-free hemispherical grain deposition, and increased film adhesion. Additional features include a high uniformity plasma generator, integrated planarization source, closed-loop process control, and advanced automation. In summary, NOVELLUS CONCEPT 3 is a production-level CVD reactor designed to meet demanding fabrication requirements related to high throughput, first-time yields, and low defect production. It can handle wafers up to 300mm in size and features variable power options, a layer of rare earth gate oxide, and automated control systems for safe and reliable deposition. CONCEPT 3 is optimized for preconditioning substrates and achieving tight process control, as well as featuring fast thermal ramp rates, triple frequency plasma sources, and advanced automation.
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