Used NOVELLUS CONCEPT One #9222493 for sale

NOVELLUS CONCEPT One is a high-speed, high-precision plasma-enhanced chemical vapor deposition (PECVD) reactor. This reactor is designed to perform a wide range of deposition, etch, and deposition-etch processes on multiple wafers. It offers greater uniformity and better process control than conventional techniques by using plasma activation, multiple zone processes, and dynamic adaptive tuning. NOVELLUS CONCEPT ONE reactor is composed of a vacuum chamber, an antenna equipment, a turbo pump, a RF generator, and a slit valve. Inside the vacuum chamber, the reactive gases, hydrogen, nitrogen, and argon are introduced at a desired rate through the slit valve and into the reaction zone. The slit valve is driven by air pressure and can be adjusted to regulate the inlet gas flow. The high-frequency radio-frequency (RF) generates the plasma necessary to activate the process gas and is coupled to the reactor through an antenna system. The antenna unit is optimized using a frequency sweeping technique. This enables the RF generator to recognize the resonance frequency of the antenna machine, allowing for precise control of the process parameters. Once the RF generator is coupled to the antenna tool, the turbo molecues pump is used to maintain the desired pressure within the vacuum chamber. The pump removes the process gas molecules from the chamber and allows for precise adjustment of the pressure in the chamber, helping maintain repeatability during the process. In the processing chamber, the RF generator produces a monochromatic wave energy that excites the process gas molecules. The excited molecules then react with each other to form a thin film on the substrate. The interaction between the plasma species, the process gases, and the substrate can be precisely tuned by adjusting the DC bias and duration of the pulse, as well as the pressure, temperature, and flow rate of the process gases. CONCEPT One reactor is a versatile, high-efficiency deposition tool that enhances process uniformity and eliminates wafer-to-wafer variability. Its multiple zone configuration and dynamic adaptive tuning allows for precise control and enables high-quality deposition processes of advanced materials. It is ideal for advanced product and process development and can be used to manufacture micro-structured and nano-structured components.