Used NOVELLUS CONCEPT One #9226320 for sale

NOVELLUS CONCEPT One is a reactor that is used for the deposition and etching of substrates such as metals and dielectrics. It is equipped with several advanced features such as high-frequency capacitively coupled plasmas (HFCP), and modular wafer-level process modules. The reactor combines high-throughput productivity, low cost of ownership and a small footprint, making it the perfect choice for research and production applications. The reactor is designed to provide an excellent combination of high throughput, precise control of the deposition environment and precise process recipes. An HFCP source provides increased ion densities and greater depth of etch components, resulting in improved process precision and speed. The HFCP source also offers the ability to tailor process parameters to specific needs. With NOVELLUS CONCEPT ONE Reactors precise power control, precise control of reactant supply and precise control of the deposition environment, the user is able to produce consistent and uniform deposition of thin film materials with a high aspect ratio. The reactor is also equipped with a modular wafer-level process module. This enables precise control and flexibility for wafer-level operations such as metrology, imaging, spray coating, and deposition. The reactor is also compatible with several accessories, such as Process Veinless Systems, vacuum transfer modules, gas delivery systems and variable angle coil sources. An important feature of the reactor is its fast tool setup and short-cycle times, enabling maximum productivity. In addition, it is easy to operate and provides great flexibility when developing new processes. CONCEPT One reactor provides an excellent combination of precision, performance and cost-effectiveness, making it ideal for a variety of research and production applications. With its advanced features and flexibility, the reactor is an ideal tool for the creation and implementation of reliable, reproducible and cost-effective processing and deposition.