Used NOVELLUS CONCEPT One #9266473 for sale

NOVELLUS CONCEPT One
Manufacturer
NOVELLUS
Model
CONCEPT One
ID: 9266473
Wafer Size: 8"
Vintage: 1992
PECVD System, 8" SIO2 / TEOS 1992 vintage.
NOVELLUS CONCEPT One is a type of deposition reactor used in chemical vapor deposition (CVD) to form thin film layers on substrate materials. It is designed with advanced technology to enable precise layer conformality and uniformity over large areas. The reactor utilization a combination of high-energy electron bursts, low-energy photons, and precise temperature and pressure control to control the release and movement of both solid and liquid phases of different chemicals in CVD processes. The reactor enables precise temperature and pressure control by utilizing a finely tuned mixing chamber. The mixing chamber includes a cylindrical vacuum vessel surrounded by a precise gas inlet equipment, vacuum pumps, and temperature/pressure sensors/controls. This allows for precise control of reactant gas mixtures. A gas inlet system located near the base of the reactor allows for precision delivery of gases to the mixing chamber. In addition, NOVELLUS CONCEPT ONE utilizes several advanced components to enable the precise control of rapid energy bursts. This includes an electron beam gun, which produces high-energy electron bursts that break apart reactant molecules before they enter the chamber. It also includes a light-emitting diode (LED) unit, which produces low-energy photons that promote the reaction of reactant molecules without causing damage to the substrates. In operation, CONCEPT One is started by first preparing the with the necessary reactant gases and substrate. Then, the electron beam gun produces a focused beam that breaks apart the reactant molecules before they enter the mixing chamber. The LED machine generates low-energy photons that quickly promote the reaction of the reactant molecules. Finally, the precise temperature and pressure controls of the mixing chamber enable uniform distribution of reactant molecules across the substrate. CONCEPT ONE deposition reactor has numerous advantages compared to other CVD reactors. Its precise temperature control ensures uniform layer conformality and uniformity over large areas without sacrificing the reactant gas mixture. Its electron beam gun and LED tool greatly reduce time wastage, enabling fast, efficient deposition without compromising the chemical properties of the substrate material. Finally, its gas inlet asset offers precise control of gases, ensuring dense and even layers.
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