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ID: 9077944
Reactors with silver-plated bell jars
Process: polysilicon deposition
Inlet Gas system: STC-H2
Steel pedestal: (44) homogeneously distributed brackets
(24) Silver-copper electrodes
Ring pipe
Operation Parameters:
Length of silicon rods: up to 3.200 mm
Operating pressure of reactor: 6 barg
Design pressure of reactor : 8 barg
Height of bell jar: 3.7 mm
External diameter of bell jar: 1.8 mm
Internal diameter of bell jar: 1.55 mm
Thickness of internal steel jacket: 25 mm
Thickness of silver-plate: 1.5 - 3 mm
Total weight (empty): 8.5 kg
Total weight (filled with water): 9.1 kg
Design temperature internal wall: 300°C
Connection of high temperature cooling water
Diameter: DN 100
Design temperature: 200°C
Typical operation temperatures (in & out): Up to 165°C
Maximal operating pressure: 12.5 barg
Normal operation pressure: 10- 10.5 barg
Typical electrode cooling water temperature: Up to 85°C
Inspection glass
Connection cooling water: DN 25
Connection H2 for cleaning/cooling: DN 25
Diameter of inspection glass: 70 mm
Reactor base plate:
2000 mm Diameter
(24) Cylindrical holes
(9) Nozzles
Includes:
Thyristors
Transformators.
SIEMENS CVD reactor, or Microchemistry CVD Platform, is a state-of-the-art reactor technology developed by SIEMENS which allows for the synthesis of highly controlled and consistent chemical vapor deposition (SIEMENS CVD) films. At its core, CVD reactor consists of a heated platform, a vacuum chamber and a reaction chamber. The heated platform is designed to provide uniform temperature across the reaction chamber, ensuring a consistent reaction result. The vacuum chamber is a sealed unit which houses the reaction chamber. It is responsible for providing the pressure, temperature and gas flow for the process. The reaction chamber consists of a processing element, a gas inlet and a gas exhaust port. The processing element is where the reactant gas mixture is exposed to heat, activating the processes necessary for a successful deposition. The gas inlet introduces the reactant gas mixture into the reaction chamber and the exhaust port removes the unused gas. To reduce complexity, SIEMENS has made SIEMENS CVD process highly automated, eliminating the need for manual intervention and human error. Features of CVD process include a user-friendly graphical interface, automatic gas flow control, two-dimensional shift of process parameters, as well as total monitoring of the deposition process. SIEMENS CVD technology has been extensively tested to ensure it produces consistent and reliable CVD films. It is a highly efficient method of producing a controlled quantity of materials at high purity, with a high degree of uniformity throughout the deposition. In summary, SIEMENS CVD reactor is a modern, automated and reliable process for synthesizing CVD films. It is an advanced manufacturing technology that can produce high-quality and consistent deposits more quickly and cost-effectively than more traditional methods. With its ability to produce slim and highly controlled deposits, SIEMENS CVD process is among the most advanced in the industry today, providing manufacturers with an efficient and repeatable method for producing thin film material which is critical for many modern electronics.
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