Used TEL / TOKYO ELECTRON Probus SiC #293667917 for sale

TEL / TOKYO ELECTRON Probus SiC (Silicon Carbide) reactor is used in the semiconductor process of chemical vapor deposition (CVD) for selective epitaxy. This reactor is based on the proven technologies of hot-wall tube-type reactor systems. The hot-wall tube is made of high-purity SiC (Silicon Carbide) material and the detector is located near the tube inlet to ensure the uniformity of the deposited layer in all semiconductor processes. The tube end is equipped with a slit nozzle to ensure the uniformity of the gas flow and uniformity of the deposited film. TEL Probus SiC reactor is equipped with an inert, gas-shielding equipment to reduce contamination. The reactor tube also has a heating system with a designated temperature profile. This allows precise control over the process conditions and the film formation and properties. The SiC material is equipped with a convenient, built-in pressure control unit and pressure gauge to ensure the accuracy of the film deposition and process control. TOKYO ELECTRON Probus SiC reactor has a variety of features to ensure the accuracy of the deposited film. It is designed with a film uniformity monitoring machine to ensure the uniformity of the thickness of the deposited film uniformly. Furthermore, an auto-feedback tool can be used to ensure the temperature profile of the process is uniform and consistent. The heating asset enables the accurate control of the deposition rate and the film formation. In addition, the reactor is equipped with a film thickness gauge to monitor the thickness of the deposited film. Probus SiC reactor is designed to be a reliable and precise tool for a variety of film deposition process control and analysis. The inert gas-shielding model prevents contamination and allows for safer process control. The exact temperature control enables the process to be accurately monitored and film uniformity to be achieved. The pressure control enables precisely controlling of the film deposition rate and film formation. Moreover, the auto-feedback equipment allows the accuracy of the deposition process to be continuously monitored. The film thickness gauge and uniformity monitoring system provide an accurate basis for film analysis and the evaluation of the properties of the films.