Used TEL / TOKYO ELECTRON Triase+ EX-II Ti/TiN #293802350 for sale
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TEL Triase+ EX-II Ti/TiN is a Versatile temperature controlled coreless chemical vapor deposition (CVD) reactor designed and produced by TOKYO ELECTRON. It is a high-performance reactor that is perfect for producing thick or thin, uniform films of titanium nitride, while avoiding contamination associated with traditional CVD systems. The EX-II is equipped with a high-precision temperature controller, allowing for accurate control of film growth temperatures from 0°C to 1500°C. The coreless design also allows for low-profile installation and improved gas uniformity, while providing better heat uniformity compared to other systems. The reactor is powered by a 1000 watt heating element that ensures a stable and consistent heating environment. This, combined with the uniform gas environment is how the Ti/TiN films are consistently thick or thin, and deliver optimum electrical properties. The temperature controller also ensures better temperature stability and accuracy, resulting in improved particle formation and retention, and fewer deposition defects. The EX-II Ti/TiN reactor is also highly efficient, with zero waste product and no need for any additional cooling equipment. It's also compatible with a variety of gases, such as hydrogen, argon and nitrogen mixtures. The reactor is ideal for a variety of applications, including thin-film transistor fabrication, electronic packaging, high-power management, and field effect transistors. Overall, TEL / TOKYO ELECTRON Triase+ EX-II Ti/TiN is an ideal CVD reactor for producing uniform films of titanium nitride, with excellent temperature control and energy efficiency. The system's coreless design is perfect for low-profile installation, and it delivers consistent film growth temperatures with unmatched accuracy. The reactor's efficient design also eliminates the need for additional cooling equipment, and makes it compatible with a variety of gases. With the EX-II Ti/TiN, users can achieve excellent thin film properties with fewer deposition defects.
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