Used ULVAC EBS-10A #9055245 for sale

ULVAC EBS-10A is a low energy plasma reactor designed for high precision substrate etching and film deposition. It utilizes an ionized gas (plasma) to create a powerful chemical reaction on a substrate. This allows for the formation of intricate electronic structures with fine line widths and high repeatable processes. EBS-10A consists of a high-frequency power source, controller, chamber and process gas source. The chamber is a stainless steel, vacuum-sealed environment that is capable of handling atmospheric pressures down to 0.1Torr. It is equipped with a large 6.5" diameter viewport to monitor the process on the substrate surface. The reactor also has an RF antenna that is used to transfer the radio frequency power to the chamber. The power source is capable of supplying an RF power of 0.2-800W to the chamber, enabling a wide range of processes such as etching, sputter deposition, thermal evaporation and electron beam deposition. Furthermore, the controller allows for very accurate control of the plasma parameters and process variables including chamber pressure, etching time, and RF power. ULVAC EBS-10A is also equipped with a gas source unit that is capable of supplying process and carrier gas with highly accurate proportions and flow rates. The process gas is composed of an inert gas like argon, which is used for etching and other chemical reactions. The carrier gas is usually an oxygen (O2) or nitrogen (N2) mixture and is used to control the plasma density and the surface activation. In conclusion, EBS-10A is a versatile and high precision reactor designed for a wide range of substrate processing, including etching, sputter deposition, and film deposition. Its features include an adjustable pressure chamber, a powerful RF source, accurate gas source unit, and a controller for precise process control. The plasma reactor offers excellent control over very fine feature sizes and a high repeatability, making it an ideal choice for substrate processing.