Used ULVAC Entron-EX2 W300 #9314154 for sale

ULVAC Entron-EX2 W300
Manufacturer
ULVAC
Model
Entron-EX2 W300
ID: 9314154
Vintage: 2015
Plasma doping system 2015 vintage.
ULVAC Entron-EX2 W300 is a plasma-enhanced thermal CVD reactor designed for semiconductor production. It is capable of depositing high-quality films on modern substrates, including silicon, oxide, glass, and other advanced crystalline materials. Entron-EX2 W300 is the latest model from ULVAC (Ultra-Low Voltage Acoustic CVD) and features an innovative and powerful W-shaped 300-MHz plasma source. This enables the device to produce ultra-high deposition rates and high-temperature plasma CVD processes. The overall design of ULVAC Entron-EX2 W300 is highly compact, making it suitable for lab applications as well as semiconductor production runs. It measures just 480 (W)x 1075 (D)x 905 (H) mm and is capable of depositing materials on substrates of up to 150 mm in size. The device features a built-in process control interface that is used to control the flow rate, gas mixture, pressure, and temperature. Entron-EX2 W300 utilizes a high-power RF discharge along with an advanced arc control system to deliver uniform, high-rate plasma production. This ensures that material films of uniform thickness are deposited on different substrates, yielding excellent results in semiconductor device and semiconductor wafer production. ULVAC Entron-EX2 W300 also features a built-in microcontroller to monitor and control parameters such as temperature, pressure, and flow rate. Entron-EX2 W300 boasts a variety of other features that make it ideal for use in semiconductor device and semiconductor wafer manufacturing. It also features a ceramic insulation design that minimizes heat loss during operation, helping to reduce energy costs. In addition, ULVAC has implemented a novel cooling system, utilizing an array of thermoelectric coolers, to ensure that the device remains cool and efficient during long production runs. Overall, ULVAC Entron-EX2 W300 is an incredibly advanced and reliable thermal CVD reactor which is capable of depositing high-quality films on a range of different substrates. Its innovative and powerful W-shaped 300-MHz plasma source enables very high deposition rates and high-temperature plasma CVD processes, and ULVAC advanced cooling system ensures that the device temperature is consistently maintained for greater energy efficiency. Its compact design and multiple specialized features make it an ideal choice for a variety of semiconductor device and semiconductor wafer manufacturing applications.
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