Used VEECO / EMCORE K465i GaN #9180276 for sale

VEECO / EMCORE K465i GaN (Gallium Nitride) Reactor is a specialized reactor designed to enable researchers to conduct experiments using the unique and beneficial properties of the compound. The K465i reactor enables efficient deposition of high-quality III-V nitride compound material layers for a variety of device applications. It is equipped with optimized process control abilities that allow researchers to increase their material deposition yield and deposition rates while reducing stress and enabling better control of the process. The K465i reactor is built with a two or three-stage configuration, using a 30 cm wide by 5 cm high annular-shaped reaction chamber. This allows it to support a wide range of process applications using either inductively coupled plasma (ICP) or DC magnetron-sputtering. Additionally the K465i is equipped with a revolutionary mix of efficient gas delivery systems and reactive gas flow control, allowing for precise process control. The K465i's unique design offers researchers high-quality material deposition rates and uniformity with minimal material stress. Feature sizes down to sub 20 nm are achievable with this reactor due to its optimized layers. Additionally, researchers have the ability to fine tune the process recipe and maintain process stability through the use of its proprietary advanced process control package. The K465i also offers an unprecedented level of process automation and process monitoring. An onboard diagnostic suite provides insight into the chamber environment while a comprehensive software package allows for repeatable processes and automated process control. These tools can be used to minimize the time it takes to develop complete processes. The K465i reactor is the only commercially available reactor that provides the breadth of research and application found in nitride III-V materials. With advanced control, automated monitoring, and optimized gas delivery systems this state of the art reactor is the ideal choice for research and development of innovative nitride material semiconductor devices.