Used VEECO / EMCORE K465i #9227304 for sale

VEECO / EMCORE K465i reactor is a high-temperature plasma enhanced chemical vapor deposition (PECVD) equipment. This system is designed to provide uniform and high-density deposition of dielectric films in a rapid and repeatable manner. It is specifically useful for applications such as MEMS fabrication, thin film solar cell manufacture, and nanocrystal synthesis. VEECO K465i utilizes dual RF generator technology which allows for a high-temperature directly heated substrate with low substrate bias voltage. This results in low dishing, high uniformity, and high-quality film deposition. The standard chamber configuration houses up to four 6-inch and eight 3-inch susceptor wafers. This high capacity enables high-throughput process optimization and optimization of different film types for various applications. The PECVD process is regulated by precisely controlling the plasma chemistry, chamber pressure, substrate temperature, RF power, and other parameters. It contains temperature measurement capability of +/−0.3°C, which allows for uniform and repeatable thin-film deposition on every wafer. In addition, EMCORE K465i offers an integrated process control unit to accurately monitor performance and optimize the process. A thermocouple based end-point circuit monitors the deposition rate in situ and is used to precisely control end-point optics. This results in improved control over the film composition and crystal structure, resulting in improved performance characteristics of the resulting material. K465i also offers a range of standard and custom load-locks and all other associated components to guarantee highest productivity and process stability. It is designed to meet stringent performance criteria for PECVD systems for semiconductor and MEMS device manufacturing processes. It is a reliable and robust machine that can be used in cleanroom and industrial research and development (R&D) settings. In conclusion, VEECO / EMCORE K465i reactor is an advanced PECVD tool that enables high-quality, uniform deposition of dielectric, silicon-containing, and other nanostructured films. It allows for reliable and repeatable control over process parameters such as temperature, RF power, chamber pressure, and plasma chemistry. Through its integrated process control asset and thermocouple based end-point optics, this model provides maximum productivity and reliable performance.