Used VEECO / EMCORE TurboDisc K465i GaN #9375120 for sale

VEECO / EMCORE TurboDisc K465i GaN is an epitaxial reactor designed for the production of special materials in various applications. It features a high-efficiency ECR-assisted Microwave Plasma-Enhanced Chemical Vapor Deposition (PECVD) module that offers precise control of film growth characteristics. The plasma is continuously monitored to ensure optimal deposition rates and characteristics during processing. The reactor is outfitted with a high frequency source that allows for the selectable input of two power levels and multiple frequency settings, allowing for an adjustable and controllable environment. The high frequency source ensures a consistent and stable processing environment, resulting in a uniform deposition profile across the entire wafer. VEECO TurboDisc K465i GaN offers maximum process flexibility and an improved processing window, allowing for the production of compound semiconductor and dielectric materials in one run. It is capable of delivering superior film uniformity and deposition rates, as well as precise control of the crystal structure and film properties. The reactor's superior uniformity makes it ideal for the production of both GaN and SiC materials. The reactor can be equipped with a real-time monitor equipment to ensure accurate real-time monitoring and data collection for greater process control during deposition. In addition to its efficient performance for the production of special materials, EMCORE TurboDisc K465i GaN is also outfitted with a variety of safety features to prevent accidental overheating or damage during operation. Its safety system includes an overload protection unit, an alarm to alert the operator of potential hazards, and a unique temperature limit check machine designed to protect the reactor and prevent catastrophic failures. The module is equipped with an overpressure tool, which prevents the build-up of gas pressure during operation and helps to ensure optimal process conditions. TurboDisc K465i GaN is an ideal epitaxial reactor for the production of compound semiconductor and dielectric materials that demand the highest levels of performance. Its automation capabilities, precise control of process parameters, and comprehensive safety features make it a reliable and efficient option for the production of high-quality materials.