Used VEECO / EMCORE TurboDisc K465i GaN #9375123 for sale

VEECO / EMCORE TurboDisc K465i GaN (Gallium Nitride) reactor is an advanced epitaxial equipment designed for processing a wide range of advanced microelectronic materials. This reactor utilizes uniform layer deposition technology to produce a wide variety of complex and precise devices such as SMART-MEMS, power electronics, LEDs, and other optoelectronic components. VEECO TurboDisc K465i GaN is a high temperature epitaxial reactor configured for deposition of wide range offilms and composites with superior structural and electrical properties. This system incorporates an adjustable temperature profile to maximize uniformity, as well as temperature and pressure sensors for enhanced process monitoring and control. The unit provides superior crystal quality products with precise, repeatable and high throughput performance, reaching up to 200 mm/min. It is also capable of operating with a wide range of precursors, including silanes, organometallic sources, hydrides, and other nitrogen and group III compounds. To facilitate efficient operation and precision control, the machine is equipped with two independent RF generators for GaN deposition, as well as etch and deposition chambers. The tool also features an advanced gas delivery asset, precision pumping technology, and turbomolecular pumps for accurate gas delivery. Additionally, the model is compatible with industry-standard design tools in order to facilitate easy device design and signal analysis. Moreover, the equipment features adaptive backside pressure (ABP) technology for enhanced film uniformity. The ABP enables rapid and uninterrupted wafer processing in order to reduce total cycle time, as well as minimize precursor and gas consumption to save on operating costs. Incorporating advanced safety features, EMCORE TurboDisc K465i GaN is designed for effective operation and performance. With multiple fail-safe methods and user alert capabilities, the system is always working to ensure safety during operation. Overall, TurboDisc K465i GaN reactor is an advanced epitaxial unit designed for utmost precision and effectiveness in producing a wide variety of complex and precise microelectronic structures. With superior crystal quality, adjustable temperature profiles, and adaptive backside pressure, this machine is an ideal choice for creating extremely precise and specialized structures.