Used VEECO / EMCORE TurboDisc K465i GaN #9375124 for sale

VEECO / EMCORE TurboDisc K465i GaN Reactor is a versatile next-generation, vapor-phase epitaxy reactor designed to offer superior process repeatability, deposition rates and uniformity. It is ideal for research and development and production applications, offering superior performance for the process of growing thin films of Group III nitride materials, such as GaN, AlGaN and InGaN. The K465i GaN reactor is designed specifically for the HRM (High Rate Molecular Beam Epitaxy) process, which can enable extremely high deposition rate growth, making it suitable for both research and commercial production levels. Its special design allows for several advantages over conventional MBE (Molecular Beam Epitaxy) techniques, such as improved substrate heating, a wider range of wafer size compatibility, higher deposition throughput, improved crystal perfection, and process repeatability. The K465i GaN reactor consists of several components, including a magnesium-oxide source supply, effusion cells, a cryopopper catomater source, a heated substrate holder and two turbo-molecular pumps. The magnesium oxide source is a critical component in the reactor, as it is responsible for providing the precursor material which will be converted into a thin film on the substrate. An effusion cell holds the source material, while the cryopopper catomater source creates a precise flux of atoms in order to form the thin film on the substrate. The heated substrate holder allows for the thin film to be deposited at certain temperatures, while the turbo-molecular pumps create a vacuum in order to reduce the potential contamination that could be present in the deposition chamber. The K465i GaN reactor offers unparalleled control over temperature, growth rate and substrate reactivity. This enables extremely uniform thin films to be produced, even with complex structures. Furthermore, it can realize extremely high growth rates compared to conventional MBE machines, which can reduce the time needed for deposition drastically. Overall, VEECO TurboDisc K465i GaN Reactor is a powerful tool for research and production application of nitride thin films. It offers unparalleled uniformity and control over the substrate-film interface, enabling scientists and engineers to precisely take advantage of its results. With its excellent repeatability and performance, it can be the perfect tool to achieve superior device performance with less time spent on deposition.