Used VEECO / EMCORE TurboDisc K465i GaN #9375128 for sale

VEECO / EMCORE TurboDisc K465i GaN is a reactor which combines both efficiency and capability for epitaxial growth of advanced GaN power semiconductor materials. With substrate sizes up to 8", the K465i is highly efficient and reliable for both traditional SiC and GaN processes. The equipment utilizes state-of-the-art DirectView Optics and automated robots to produce superior material utilization from a single or double-sided chemical vapor deposition (CVD) process. The K465i features a rugged vertical multi-zone CS-II high-temperature furnace with built in cold-wall technology for the highest degrees of accuracy and versatility. An efficient heating/cooling operation stabilizes both the layers and enables multi-layer processing. The advanced controller is designed to regulate temperature or pressure, as well as ensure accurate target values across each individual layer. The K465i also features a detailed process control interface (PCI) which offers users access to customized recipes from the computer aided design (CAD) program. This access enables fast system debugging and initial performance characterization while also able to be used to program process parameters and additional settings, such as unit pressure. The unit is also equipped with a shutter gate for easy wafer exchange in single-or dual-wafer configurations. The unit is designed for use in production, and features industry-leading reliability and robustness, while also offering excellent repeatability and current uniformity. Furthermore, the K465i supports the development of advanced structures, such as 3D, heterostructures, and highly conductive channels. The K465i utilises enhanced safety systems and is backed with long-term service contracts, including preventive maintenance services to ensure that the machine is actively maintained and performs optimally over extended periods of time. With these advanced capabilities and support, VEECO TurboDisc K465i GaN is the perfect solution for organisations looking to produce superior Epitaxial GaN materials and structures.