Used VEECO / EMCORE TurboDisc K465i GaN #9375130 for sale

VEECO / EMCORE TurboDisc K465i GaN Reactor is a high-performance deposition equipment designed specifically for Gallium Nitride (GaN) deposition. The K465i is capable of depositing GaN at rates ranging from 10 to 150nm/minute. It is a production-level deposition system that offers low variation, high uniformity and outstanding repeatability of deposition processes. This advanced reactor has integrated, closed loop, gas delivery, ion assist, temperature control, and in situ process monitoring. The K465i is constructed from a ceramic aluminum nitride ceramic substrate with a beryllium oxide liner, making it robust and reliable for industrial applications. The substrate is mounted on a heating stage and heated up to 1000°C in order to facilitate the GaN deposition. The ion assist serves to reduce the deposition temperature to less than 400°C and can be used to build a conformal deposition rate profile. The integrated closed loop gas delivery unit can be continuously commanded during the deposition process in order to create a uniform GaN film. The K465i uses advanced deposition techniques, such as Atomic Layer Deposition (ALD), Molecular Layer Deposition (MLD), and Plasma Enhanced Atomic Layer Deposition (PEALD), to deposit ultra-thin films and high-quality GaN layers. These techniques can be used to build structures, such as multi-stem LED devices and high-power heating elements. Furthermore, with the PEALD mode, a higher deposition rate of up to300nm/minute can be achieved. The K465i is an ideal deposition machine for producing thin, high-quality GaN layers. The advanced process monitoring capabilities allow for precise control of the deposition parameters and the integrated closed loop gas delivery tool guarantees a consistent GaN deposition rate and uniformity. Additionally, the advanced reactor architecture ensures lifetime product reliability and repeatability of results.