Used VEECO TurboDisc K465 GaN #9410043 for sale

VEECO TurboDisc K465 Gallium Nitride (GAN) reactor is a plasma-enhanced chemical vapor deposition (PECVD) equipment that is designed to provide a highly efficient and exacting deposition process for the production of GaN-based semiconductor devices. It offers both process flexibility and repeatability to ensure high yields and excellent device performance. This system is ideal for applications including transistors, Schottky diodes, HEMTs, high-power devices, and laser diodes. The K465 reactor is constructed with a circular shape forming a horizontal or vertical disc, depending on the end user's needs. This unique design enables features an advanced uniformity structure to ensure excellent uniformity and deposition rates. The gas distribution unit utilizes a single gas injector with multiple diffuse injection ports distributed around the circumference of the process chamber. Such design maximizes the homogeneity of the gas distribution across the chamber. Also, the TurboDisc K465 reactor is equipped with a multi-stage, low-pressure) linear fast-pump/roughing pump machine for efficient and precise pressure control. The manifold piping is constructed out of stainless steel for a longer operational life. The TurboDisc K465 plasma reactor is characterized by a wide plasma range and process temperatures up to 1000°C. It is able to accurately deposit compound semiconductors such as AIN, AlGaN, AlN, GaN, and InGaN with depositions rates up to 45 nm/min with excellent uniformity. Its patented substrate rotation technology and wide power range allow optimization of deposition process conditions to produce epitaxial layers with high quality and uniformity. The TurboDisc K465 reactor tool has a highly intuitive and user-friendly graphical user interface to provide visual feedback and allow easy and fast adjustment of process parameters. This interface also allows for useful data acquisition and process development activities. VEECO TurboDisc K465 GaN reactor is a reliable, high-performance deposition asset for the fabrication of advanced GaN-based semiconductor devices. Its unique features, process flexibility and repeatability, and graphical user interface makes it an ideal choice for industry, research, and development needs.