Used HITACHI S-4000 #293617186 for sale

HITACHI S-4000 is a field-emission scanning electron microscope (FE-SEM) used in the research and development of microelectronics, nanotechnology, and materials science. At the heart of HITACHI S4000 is its back-scattered electron detectors for imaging and elemental observation, along with its dual column pole piece system. This system improves image resolution and minimizes line-edge roughness by attaining an optimal electron beam deflection angle and maintaining beam stability throughout the observation. S 4000 possesses high-performace imaging capabilities with its ultra-high accelerating voltage and high-end detector. It can generate images with resolutions up to 8 nm, for ultra-fine imaging of fine structures like nano-scale electronics and micro-fabricated devices. Its secondary and back-scattered electron detectors are optimal for pointing up elemental compositions across difficult-to-observe surfaces. S-4000 is designed to acquire topographical images at the same time it analyzes elemental compositions. Its features include bright-field images and dark-field images that allow users to analyze structures of fine topographies, grain size, and particle distributions. S4000 has a beam deceleration voltage of 1kV and an accelerating voltage sufficient for reliable detection of carbon, oxygen and various heavier elements. Furthermore, its small beam diameter mitigates damage to the sample surfaces. HITACHI S 4000 is a large scanning electron microscope for industrial use, with intuitive analytical software and sophisticated detection and system control technology. It is equipped with the latest digital imaging technology, from CCD cameras to an automated sample stage manipulator. It is capable of image acquisition of multiple magnifications, wave-form capture and more. Overall, HITACHI S-4000 is a top-of-the-line scanning electron microscope for industrial use, ideal for applications such as the imaging and analysis of fine structures, general elemental analysis, and observation of surface morphologies and defect analysis. Its numerous features grant unprecedented levels of resolution, analytical insight, and sample damage prevention.