Used JEOL 2010F #293757804 for sale
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ID: 293757804
Transmission electron microscope (TEM)
Electron source: Schottky Field Emission Gun (FEG)
Power supply: 80-200 kV
Water manifold
HT Tank
Power rack: STEM PSU
Ion pump controller
EDWARDS Primary scroll pump
Gas: SF6
Gatan GIF100 Post column energy filter
With camera 1K
OXFORD INSTRUMENTS LN2 EDS detector
With ISIS
JEOL Bright field and dark field STEM Detectors
Power supply: 80, 100-200 kV
Biprism electron
Standard single tilt and double tilt holders.
JEOL 2010F is a high-performance scanning electron microscope (SEM) equipped with a wide range of advanced features. It is renowned for its excellent resolution and accuracy across various applications, including 3D imaging and analysis. The microscope is equipped with a Schottky field emission gun (FEG) electron source, a large specimen chamber, and an automated computer-controlled operation system. JEOL 2010 F features a high-resolution SE (secondary electron) detector for three-dimensional imaging and has two location modes - topographic and free-motion. The topographic mode provides 3D imaging by recording the relative timing of secondary electron signal arrival from various points in the sample, and the free-motion mode is used to move the SEM around the sample and allow for further imaging opportunities. The user-friendly operation system of 2010F includes an intuitive graphical user interface for optimal control and corrections. It also features several advanced capabilities such as a large-scale gas injection system, an image-stabilizing BSE (backscattered electron) detector, and an advanced software package for automated camera control and 3D data manipulation. The Schottky field emission gun of 2010 F has a very short thermal noise emission time, allowing for a stable and highly reproducible operation. This is especially beneficial for measurements requiring higher energy stability, such as in x-ray analyses. Additionally, the FEG of the SEM has a variable accelerating voltage between 0.1 keV and 30 kV. JEOL 2010F is suitable for a wide range of research applications, including those related to microanalysis, semiconductor failure analysis, material sciences, and 3D imaging. With its excellent resolution and accuracy, it is a reliable tool for scientific research and experimentation.
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