Used JEOL JBX-5500FS #9131532 for sale

Direct Write E-beam Lithography System, 4" Specifications: General: Electron-beam lithography system that employs spot-beam vector scanning for sub-micron and nano-lithography Two selectable writing modes: High-resolution writing mode (5th Lens mode) for nano-lithography High-speed writing mode (4th Lens mode) for sub-micron lithography Accelerating voltage is also selectable either 25kV or 50kV Beam scanning speed: 12MHz Stage position is controlled by high-precision laser interferometer Control system: Microsoft® Windows® PC Minimum feature size: High-resolution writing mode 50Kv: </= 10 nm (at the field center) Overlay accuracy: High-resolution writing mode 50kV:</= 40 nm (3 sigma) High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma) Field stitching accuracy: High-resolution writing mode 50kV: </= 40 nm (3 sigma) High-speed writing mode 25kV (1200 um Field): </= 70 nm (3 sigma) Performance: Electron beam: Beam shape: Spot (Gaussian) beam Accelerating voltage: 50 kV, 25 kV Beam current: 30 pA to 20 nA Beam deflection method: Vector scan (Random access) Writing field: High-resolution writing mode: 50kV: Up to 100 um X 100 um 25kV: Up to 200 um 200 um High-speed writing mode: 50kV: Up to 1000 um 25kV: Up to 2000 um Beam positioning DAC: (18) bits Beam-positioning unit: High-resolution writing mode: 50kV: 0.5 nm 25kV: 1 nm High-speed writing mode: 50kV: 5 nm 25kV: 10 nm Beam scanning DAC: (12) bits High-resolution writing mode: 50kV: 0.5 nm x N 25kV: 1 nm x N High-speed writing mode: 50kV: 5 nm x N 25kV: 10 nm x N Beam scanning speed: 83.3 ns to 4 ms/scanning step size (12 MHz to 250 Hz, respectively) Field correction function: Deflection correction: Amplitude, Rotation Deflection aberration correction: Deflection distortion Stage movement: Method: Step and Repeat Stage position measurement: Laser interferometer Positional step size: lambda/1024 (approx. 0.6 nm) Stage movement range: 104 x 75 mm Writing area: 75 x 75 mm Moving speed: Up to 10 mm/s Material Transfer: Loader Manual loader: Single cassette loading mechanism Cassette (Substrate Holder) Wafer size: 2 to 4 inch Wafer loading/unloading: Manual Input pattern data: Data format: JEOL52(V3.0) Writing field: High-resolution writing mode: 50kV: Up to 100 um x 100 um 25kV: Up to 200 um x 200 um High-speed writing mode: 50kV: Up to 1000 um x 1000 um 25kV: Up to 2000 um x 2000 um Specified resolution: High-resolution writing mode: 50kV: 0.5 nm 25kV: 1 nm High-speed writing mode: 50kV: 5 nm 25kV: 10 nm Writing functions: Cyclic correction: Dose correction, Beam position correction, Beam deflection system correction Shot time modulation: Up to 256 ranks Field shift overlapping writing Design Functions: Data format: JEOL01 Data conversion output: JEOL52(V3.0) Draw-able figure: Rectangle, Circle, Polygon, Line, Ring Editing: Flip, Rotation, Copy & Paste, Duplicate, Grouping Utility: Reticular, Radial, Fresnel ring generator Figure map display: Display whole and partial drawing Others: JEOL52(V3.0) display Configration: Component Systems Electron beam column Electron source: ZrO/W emitter (Thermal field emission source) Electron beam optics: Beam alignment coil Beam blanker Lens (de-magnifying, illumination) Objective lens (4th Lens, 5th Lens) Beam deflector (1st Deflector, 2nd Deflector) Stigmator: Objective aperture (4 holes) Electron beam detection: Back-scattered electron detector, Secondary electron detector, Absorbed current detector Material-driving system: XY stage, Laser interferometer system Material transfer: Manual loader (one cassette can be loaded) Control CPU system Personal computer: HP series Workstation: SUN series Board CPU Evacuation system: Vacuum pumps, Valves Frame Anti-vibration: Mount Software Operating system Personal computer: Windows XP Workstation: Solaris 10 Writing preparation: Pattern design GUI System control: Main GUI, System calibration GUI, Writing GUI Installation requirements: Power Supply Voltage and Capacity: Single-phase, 100 V, 4 kVA: (2) Lines Single-phase, 200 V, 8 kVA: (1) Line Three-phase, 200 V, 4.8 kVA: (1) Line Power supply frequency tolerance 50 Hz regions: 47 Hz to 53 Hz 60 Hz regions: 57 Hz to 63 Hz Voltage variation tolerance For 1 cycle or more: -5% to +10 % For less than 1 cycle Sag (voltage sink): </= 10 % Surge (voltage rise): </= 10 % Notch: </= 200 V Spike: </= 200 V Grounding (forbidden to be used with other instruments) Ground wire (for exclusive use): 100 0hm or less (D class) For 0.15 MHz to 0.5 MHz: </= 79 dBuV (quasi peak value); </= 66 dBuV For 0.5 MHz to 30 MHz: </= 73 dBuV (quasi peak value); </= 60 dBuV For less than 0.15 MHz, compatible with the level at 0.15 MHz Primary Cooling Water Flow rate: 6 L/min (at 25 C) or 13 L/min (at 32 C) Supply pressure: 0.15 to 0.5 MPa gauge pressure at maximum Temperature: 15 to 32C Connection form: Braided hose (inside diameter 15 mm, outside diameter 22 mm) Overflow drain: No backing pressure pH (at 25 C): 6.0 to 8.0 Electrical conductivity (mS/m) (at 25 C): </= 30 Chloride ion (mg Cl–/L): </= 50 Sulfate ion (mg SO42–/L): </= 50 Total hardness (mg CaCO3/L): </= 70 Calcium hardness (mg CaCO3/L): </= 50 Ionic silica (mg SiO2/L): </=30 Iron (mg Fe/L): </= 0.3 Sulfide ion: Not detected Ammonium ion (mg NH4+/L): </= 0.1 High-pressure gas Material: Nitrogen gas or Clean Dry Air Supply pressure: 0.5 MPa Maximum flow rate: 50 L/min Connection form: 6 mm in diameter Low-pressure Gas Material: Nitrogen gas Supply pressure: 0.1 MPa Maximum flow rate: 50 L/min Temperature: 21 to 25 C Cleanliness: ISO Class 3 Purity: 99.999% or more Connection form: 1/4 inch in diameter Evacuate: For roughing vacuum pump Evacuating capacity: 500 L/min at 50 Hz, 600 L/min at 60 Hz Pressure: No backing pressure Connection form: NW25 Installation Space: 5.5 (W)x 3.5 (D)x 2.7 (H) m or more Entrance: 2.0 (W) x 2.1 (H) m or more Room Temperature: 21 to 25C Stability: Within +/- 0.2C/h (Main console area); Within 1C/h Other units area Humidity: 60% or less (non condensing) Airflow: about 0.3 m/s Stray magnetic field Commercial frequency: (BX2+BY2+BZ2)1/2 </= 0.1 uT Drift component: (BX2+BY2+BZ2)1/2 </- 0.1 uT Floor Flatness: +/-1 mm within 600 x 600 mm area Sound Noise Level 20 Hz-12500 Hz: </= 65 dB 20 Hz and under: </= 90 dB 2010 vintage.