Used CANON / ANELVA ILC-1012 MKII #9144933 for sale

CANON / ANELVA ILC-1012 MKII
ID: 9144933
Wafer Size: 4" 5"
Sputtering systems, 4" 5".
CANON / ANELVA ILC-1012 MKII is a DC-triggered sputtering system designed for thin-film deposition applications. CANON ILC-1012 MKII features an ionized physical vapor deposition (PVD) technology, which enables both accurate and consistent coating of substrates with a wide range of materials. The system consists of a vacuum chamber, a sputteringtarget, a high power cathode, an RF plasma generator, and an ion source for enhanced ion beam etching. The vacuum chamber of ANELVA ILC-1012 MKII is designed to maintain a high vacuum of 10e-4 Torr. It is insulated with ceramic fiber and aluminum oxide, providing excellent thermal shock resistance and uniformity. The sputtering target was designed to minimize target erosion and maximize deposition rate, with a sputter rate of up to 300 - 700 nm/min for gold,chrome, steel, tungsten, aluminum, and other metals. ILC-1012 MKII also features a high power cathode that produces a uniform power density to the target area, equipped with a frequency-regulated DC power supply. This supplies the uniform electric power to ensure consistent and precise processing. The RF plasma generator produces a highly uniform glow discharge over the target area. The RF generator also features programmable frequency control from 1MHz to 60MHz, to ensure precise control of the power density and film thickness. CANON / ANELVA ILC-1012 MKII also features an ion source for high power ion beam etching and ion assisted deposition (IAD). This vaporizes and ionizes the target material without introducing reactive etching gases and produces a uniform magnetic field to sweep away plasma ions from the target area. The ion source also features adjustable acceleration voltage from 50V to 1500V, allowing for variable etching power from 0.1 watt to 30 watts. CANON ILC-1012 MKII is a powerful sputter system, designed to produce uniform thin films with minimal target erosion. It is perfect for a wide range of thin-film deposition applications, including thin film oxide coatings, ferroelectric film coatings, semiconductor film coatings, and dielectric films. Its advanced features allow for precise control of the film deposition.
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