Sputtering Systems

Sputter system (3) Cathodes.

E-beam evaporator Jar / Dome, 19.5'' (4) Pockets TEMESCAL E gun CV 14 Power supply FILTEK Programmable XY sweep OMARON Heat control CTI 8 CRYO / Compressor GE PLC Control system BALZER Duo mechanical pump KF Valving SS Flex hose.

Electron Beam Evaporation System 25.5-inch diameter x 12-inch high stainless steel, water-cooled deposition chamber designed for waist high substrate loading and unloading 25.5-inch diameter x 20 inch high stainless steel, evaporation source chamber with model VV-400 View Vac view port with Teflon film CTI 400 On-Board cryogenic pump CTI 9600 Helium compressor Mechanical vacuum pump Auto / manual vacuum valve sequence controller Ionization gauge and thermocouple gauge controller Inficon IC6000 Auto/Manual Deposition rate / process controller CV-14, 14kW electron beam power supply with X-Y beam sweep controller Temescal Four (4) pocket electron beam gun with crucible indexer Source shutter assembly fully integrated with deposition controller Substrate tooling for Lift-off deposition process System manuals Optional: Neslab HX350 air cooled water chiller / recurculator 1991 vintage.

Sputtering coater.

Sputter coater.

Sputtering system, 8".

Sputtering system, 8" 1997 vintage.

Sputtering system, 6" Missing parts: Booster Cryo pump.

Sputtering system Substrate size: 105 x 105 mm Taget: 75 mm Cryo pump 1990 vintage.

Horizontal in-line sputtering system Process parameter control ranges: Sputtering pressure: 5 microns to 30 microns Conveyor speed: 0.1 to 80 cm.min D.C. Deposition power level: 100 to 9000 watts R.F. Deposition power level: 50 to 3000 watts R.F. Sputter clean power level: 15 to 1000 watts Substrate heating: Inline heating is variable from ambient to 350°C Uniformity performance: (Across 12” sputter zone) Etch: ±10% Deposition: R.F. Magnetron ±10% D.C. Magnetron ±5% Vacuum performance: Ultimate pressure (total system): 2X 10(-7) in 16 hours clean, dry and empty 5 x 10(-7) in 30 minutes Rate of rise: More than 6 minutes to 1 x 10(-4) torr clean, dry and empty Vacuum tight: Less than 5 x 10(-10) standard atmosphere cc helium/second Optional features: Multiple cathodes Multiple power supplies DC and RF in any mix With / Without sputter etch With / Without substrate heating Turbo pump Hi-Vac Cryo pump Hi-Vac Sputter up / Sputter down With / Without load lock Various numbers of process gases Rail bias Installed RGA With / Without window shutters Unequipped chamber for future expansion Target assembly sizes: 15”, 22”, 35”, and 50” Utility requirements: Power: 208 V 100 Amps 3 Phase 50 / 60 Hz 4 Wire delta 5 Wire wye Water temperature: 50° - 75° F (10-24°C) Air: 70 to 100 PSIG (6 to 8 ATU) filtered 1 CFM Sputtering gas: Typically 5 PSIG (1.3 ATU) Argon.

Sputter coater.

Sputtering system Temperature range: 15-35 °C Relative humidity: 40-60 % (non-condensing) Electric power: Voltage: 3 x 400 VAC (+6% -10%) Current: Max: 80-100 A Max: 40-80 kVA Frequency: 50 Hz Connecting conductors: L1, L2, L3, N and PE Conductor cross section of mains power supply line: 5 x 35 mm² (for 100 A) 5 x 25 mm² (for 80 A).

RF Magnetron Deposition System Chamber: 24" dia x 12" H Dual 19" instrument rack CTI Cryo-Torr 8 Cryopump, side mounted, high conductance valve CTI 8300 Compressor with 8001 controllers RF power supply: 2kW, matching system as bias (1) 14" Magnetron source with R match system, Al2O3 target MKS vacuum gauges valve and process control systems Temperature and thickness control Electro pneumatically actuated valves VCS vacuum system controller provides automatic valve sequencing, pressure readout, and executive control of process VSC can sense analog and digital signals, RS-232.

Sputtering system Multi-purpose experimentation Leybold Turbovac 1000C Turbotronik NT 20 Combivac CM31 TRivac D40B / AF 40-65 Siemens SIMATIC C7-624.

Sputtering system With load-lock Sputter down: Cathodes with D: 75 mm Possible with adapter flange D: 100 mm (6) Cathodes: D= 150 mm Automatic lock Substrate carrier fully automatic Height adjustable turntable version Coating static Rotating Oscillating with angle specification 6-8 Substrate positions with (150) cathodes 6-Substrate positions with (200) cathodes HF Etching Rotary cover Microprocessor control (40) Coating programs: From (120) parameter sets Plant and process visualization: 9" Operating terminal Pumping system D65BCS TMP 1000 Lock D8B.

Sputtering system, 3" Processes: RF Etch, RF sputtering, RF bias sputtering Chamber size: 590 mm Throughput: (10) Substrates, 3" Dia per load Microprocessor controlled Final vacuum: 5 x 10^-7 mbar RF Power supplies: IS 7.5 and TIS 1.2 Vacuum chamber: ~24" Diameter Baffles for pre-sputtering and sputter-etching Water cooled substrate carrier Substrate mounting plate System components: LEYBOLD System LEYBOLD Sputtering chamber: ~24” diameter LEYBOLD RF-Etching, RF sputtering LEYBOLD Matching network LEYBOLD RF-Bias, penningvac, medel PMhsz LEYBOLD TMP450 Turbo pump LEYBOLD NT450 Controller LEYBOLD ES 7.5 RF Power supply, 13.56 MHz, huttinger LEYBOLD Control rack: 18kVA, 35A LEYBOLD Thermovac TM 220S2 LEYBOLD Penningvac PM 411S2 (2) LEYBOLD ME03 0-10V (2) LEYBOLD ATP 01 Digital displays (2) LEYBOLD Auto switches Display.

Sputtering system Dual level load lock CTI-8 cryo pump Simultaneous processing of 12" x 12" pallets DC Magnetron, RF Magnetron and RF diode sputtering capabilities 24 V DC components Single and bi-directional substrate scanning modes Vacuum gauging controls: Granville Philips 307 and Digivac Proteus interlock water flow switches 208 V, 100 A, 60 Hz Includes: MAT-VAC modular electro-pneumatic valve bank Hydraulic pump/motor and all lines (2) Electro-pneumatic gate valves for process chamber and load lock with position sensing.

Sputtering system.

Sputtering system (2) CTI CT-8 Cryo pumps (3) Target assemblies Power supply tower Computer Etcher LL Heat TBD.

Sputtering system.