Used MRC 822 #9039130 for sale

MRC 822 is a high-energy ion beam sputtering equipment using a high-current ion source for processing materials. This advanced sputtering technology is used to deposit thin films onto a variety of substrates. 822 system is a computer controlled machine with a user-friendly control interface which allows for process control and monitoring of sputter parameters. MRC 822 unit utilizes both a vacuum chamber and an ion beam source in order to process the substrate. The vacuum chamber is composed of stainless steel and is designed to maintain a low vacuum level, typically in the range of 10-5 to 10-6 Torr. Inside the chamber, an inner vacuum machine is also employed to maintain the target at a stable pressure. A Faraday cage surrounds the target, providing electrical isolation and shielding for the tool components. The ion beam source is comprised of a high-power linear accelerator, which enables a high level of control for controlling sputting parameters such as beam energy and particle size. The accelerator generates particle energies in the range of 100-200 keV and particles sizes ranging from 1-10 nm. The ion beam sources can accomodate an electron gun, allowing for a wide range of possible beam shapes. Additionally, the ion source can be used for etching applications, allowing for selective etching of specific targets. 822 also has an in-situ substrate bias feature which allows for deposition of films onto non-conductive substrates. This feature is ideal for films requiring a depth of penetration or material layering, such as MEMS and other thin film coating applications. The asset is capable of ultra-fine film deposition, with resolutions as low as 2-3 nm achievable with the low energy ion deposition process. Overall, MRC 822 is a powerful and versatile high-energy ion sputtering model. The computer controlled user-friendly interface allows for accurate and reliable sputter processing parameters to be inputted with ease. The step-by-step process control and monitoring allows for precise film deposition and etching applications on nearly any substrate. The combination of high-power linear accelerator and electron gun provides the user with the capability to deposit films with resolutions as low as 2-3 nm.