Used MRC 822 #9388780 for sale

MRC 822 is a high-performance, dual-source reactive ion sputtering equipment. It is equipped with two independent sputter sources: an electron-beam gun and a magnetron gun, both mounted in a shielding chamber and equipped with a closed-loop cooling system. The electron-beam gun is calibrated and controlled by a dedicated power supply, whereas the magnetron gun is powered by an external power source. The electron-beam gun is a so-called 'beam-on-target' design, meaning that it contains an electron source, focusing optics, and a stubbed tungsten target backed with water cooling. This sputter source has a wide range of adjustable parameters, including beam current, gun bias voltage, and shutter opening times, allowing for the precise control of the sputtered material composition, rate, and film thickness. The magnetron gun is designed for total yield sputtering, in which argon gas is released from a cathode in order to keep the target material in a molten state, allowing for the generation of nanoparticles. This source can also be adjusted, with parameters such as gas flow rate, gas composition, and pressure being adjustable. The sputter chamber is composed of three main parts: the vacuum chamber itself, a substrate mount with sample holder, and a magnetic shield. The chamber has a pumping rate of 20 mTorr and is equipped with a Ion Gauge Controller (IGC) to accurately monitor the chamber pressure. The substrate mount can accommodate samples up to 200 mm in size, and is capable of rotation and heating up to 375° C. The chamber also has several safety features, including a leak detector and an emergency vent valve, which can rapidly reduce the chamber pressure. Overall, 822 is an advanced sputtering unit that offers a comprehensive range of adjustable sputter parameters, a large substrate mount, and efficient cooling machine, allowing for the generation of high-quality films of various thicknesses and compositions. It is suitable for a wide range of coating and thin-film research projects, such as epitaxial growth, deposition of metal and intermetallics, oxidized surfaces, and diffusion barriers.