Used ULVAC SIV-3545 #9279165 for sale

ULVAC SIV-3545
Manufacturer
ULVAC
Model
SIV-3545
ID: 9279165
Vintage: 2003
Sputtering system DC/RF power supply: DCL-1000/RFS-1350A( (2) MBX-1350A) Gauge: (2) GI-M, (2) IM2R1, balatron 627A Cryo: (2) U-12HL 2003 vintage.
ULVAC SIV-3545 is a 3-in-1 sputtering equipment developed by the Japanese corporation ULVAC. It is comprised of a mini-magnetron sputtering chamber, an electron beam evaporation source, and an ion beam etching device. The mini-magnetron sputtering chamber has an average deposition rate of 1.2μm/min for copper, and a minimum film thickness of 1.5nm. It can deposit materials at up to 3000°C and plasma density can be adjusted from 10E15/cm3 to 10E18/cm3. The electron beam evaporation source can evaporate materials at a temperature up to 5000°C, with a minimum evaporation rate of 2μm/min. It has also incorporated a mass flow controller for precise material deposition. The ion beam etching device is capable of nitrogen etching with ion energy up to 400 keV and a maximum of 50mA current. It also has an automatic substrate transport system which supports a range of substrate sizes up to a maximum substrate size of 8" in diameter. Additionally, the unit is equipped with a vacuum chamber for process monitoring and can be operated remotely with its software. Overall, SIV-3545 sputtering machine is an outstanding example of current sputter technology. It is a high-performance and reliable tool that enables user to easily and accurately deposit thin films of various material at a high rate, while also allowing them to precisely control the properties of the films. This asset's superior performance makes it an excellent choice for applications such as thin film deposition for semiconductor and nano-materials, and for the production of nanostructures for advanced device fabrication.
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