Used ULVAC ULDiS-200 #9237375 for sale

ULVAC ULDiS-200 is a high-performance sputtering equipment designed for the deposition of thin film materials onto substrates. This system features an up to 8 kW source, an electronically-controlled vacuum chamber, and a front-opening door for easy access. ULDiS-200 source is a radio frequency (RF)-inductively-coupled hollow cathode unit powered by a DC power supply. This source machine produces an ionized plasma of high energy electrons which bombard the substrate with ions and neutral particles, while generating a substantial deposition rate. The vacuum chamber of ULVAC ULDiS-200 is comprised of stainless steel and designed to meet all safety and operation requirements. The chamber is insulated and thermally stable with excellent vacuum characteristics, enabling the tool to perform at long deposition times. Its digital pressure readout ensures precise pressure control, while its front opening door allows for easy accessibility when loading and unloading substrates. ULDiS-200 is able to produce an array of material types, including polysilicon, silicon oxides and nitrides, titanium nitride, and molybdenum. The asset has also been designed to perform precise thickness control and uniformity, making it an ideal choice for the production of thick film layers up to 5 μm. In addition, ULVAC ULDiS-200 is equipped with a variety of tools for plasma monitoring and temperature control. The model has a broad range of accessories, including crucibles, trace gases, and thermocouples. As a result, users are able to fully monitor all deposition processes. Overall, ULDiS-200 is a reliable and efficient sputtering equipment, capable of producing quality thin films. It features an up to 8 kW source, an electronically-controlled vacuum chamber, and a front-opening door for easy access, and has been designed to deliver precise thickness control and uniformity. With its long deposition times, array of material types, and wide range of accessories, ULVAC ULDiS-200 is well suited for the production of thick and thin films.