Used VON ARDENNE CF 850S #9300986 for sale

VON ARDENNE CF 850S
ID: 9300986
Sputtering system (2) Cluster systems.
VON ARDENNE CF 850S is a high-performance sputtering equipment designed to provide superior coating deposition processes. This system is all-in-one, having one chamber for coating, and another for annealing purposes. The unit includes an ultra-precise positioning machine for sputtering targets, with a maximum repeatability of +/- 0.02mm. This allows for precise homogeneous deposits over large areas. CF 850S is a load-lock magnetron sputtering tool, suitable for providing uniform thick and thin films of conductive, insulating, and semi-insulating thin-film coatings. It is able to sputter at rates of up to 1500 W/in2 with a uniformity of +/- 4%. This asset can accommodate up to three vacuum chambers, and up to nine targets, making it ideal for multi-layer deposits. The model also has an on-board sputter control unit that can regulate the gas flow, pressure, gas ratio, temperature, and other process parameters. The equipment also has an intuitive user interface for simple operation, and a variety of safety and monitoring systems, from temperature sensors and ion gauges to substrate-specific load sensors and metal deposition control. VON ARDENNE CF 850S is designed for operation in cleanroom environments, with hermetic sealing, vibration isolation, and air- and water-cooled electrical panels to ensure safety and reliability. The chamber has a standard 18" x 18" x 15" work area, with a ~40" x 40" x 80" optional footprint for larger substrates. It is designed to operate in a wide range of speeds, from a few millimeters per second up to 2000mm/sec. Utilizing this sputtering system allows for a wide range of films and coatings to be deposited with minimal material and energy consumption. This allows for a flexible, cost-effective way to produce high quality, uniform thin-film products. In addition, this unit offers a range of options and features for greater flexibility, including control of process parameters, pressure profiles, and target to substrate distance.
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