Used EBARA EPO-113 #9361602 for sale

EBARA EPO-113 is a wafer grinding, lapping and polishing equipment designed for the next-generation microelectronic market. The system has been designed for flexible and cost-effective processing of all wafer sizes. It can handle substrates from 200 mm down to below 10 μm in size with a maximum thickness of 1.2 mm. The unit is based on an advanced control machine which allows efficient completion of high-precision processes. It includes a pneumatically actuated four-piece vacuum chuck with a pre-vacuum of up to 12 mbar and a post-vacuum of up to 4 bars. It is capable of accepting up to three different carriers for wafer processing. The spin and indexing tables are driven by a brushless DC motor for precise positioning and motion control. The lapping and polishing heads are individually adjustable and combined with a precision monitoring tool to ensure consistent results. EBARA EPO 113 includes a grinding wheel with a spindle speed of up to 4000 revolutions per minute (RPM) to process wafers quickly and efficiently. It is equipped with an integrated gliding asset with a variable speed range of up to 10 m/s to ensure a high quality wafer surface. The model features either an eddy current or ultrasonic sensor to monitor the position of the grinding wheel and to provide feedback on the grinding process. The lapping and polishing operators are equipped with a variety of cups and discs to match wafer surface requirements. Grinding requirements are monitored through a touch panel interface which allows users to select or customize lapping and polishing parameters. The equipment is also capable of operating in either manual or automatic mode. The system is also equipped with a dust collection unit, which can be configured to reduce dust and noise produced during the grinding, lapping and polishing processes. The machine has also been designed to help reduce operation costs and increases efficiency. Applications include grinding and polishing of substrates made of semiconductor materials such as gallium arsenide, indium phosphide and silicon.