Used ULVAC CME-400ET #9266625 for sale
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ID: 9266625
Wafer Size: 8"
Vintage: 2010
PECVD System, 8"
(2) Trays, 8" (310 x 410)
Gas: SiH4 / N2, NH3, N2, N2O, O2, CF4
2010 vintage.
ULVAC CME-400ET is an electron beam (EB) physical vapor deposition (PVD) deposition system designed for advanced semiconductor chip production. CME-400ET consists of a vacuum chamber, an EB gun, and a horizontal power supply. The vacuum chamber is equipped with an openable door and is made of stainless steel. The EB gun is used to generate electron beams which are implanted onto the substrate inside the vacuum chamber. The horizontal power supply creates the necessary electrical field to accelerate the electron beams towards the substrate. The EB gun of ULVAC CME-400ET is equipped with connected DLC film insulators and grid electrodes to prevent energy loss. Varying voltage and current adjustments directly influence the beam's current density and density distribution. To ensure repeatable uniformity within the thin film deposition, adjustable deflection electrodes are installed to allow precise angles and directions of deflection. Additional features such as variable standoff and shutter allow full control over the EB beam's characteristics. The primary chamber size of CME-400ET is 400-450 millimeters in diameter and 200-250 millimeters in height. To maintain a consistent vacuum environment, the system is supplemented with a double-stage roughing pump and active gas bleeding system which allows for an ultimate background pressure of 10-7 Torr. Magnetron sputtering sources can also be added for metal or nitride deposition. The high-end ULVAC CME-400ET's electron beam technology offers precise and reliable thin film development, making it a valuable tool for the semiconductor industry. Its compact design, strong vacuum capability, and ability to provide divergence control make this reactor ideal for fabricating high-performance integrated circuits. With its great performance, CME-400ET is a perfect choice for advanced semiconductor chip production.
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